As an example, the helix-pitch profile of the considered tube
was modified for improving the yield (Table 1), maintaining sim-
ilar small-signal gain (62.6-dB average gain and 5% flatness). In
particularly, according to the previously exposed theory, the helix
pitch in the lower helix-pitch section (section 4) was incremented
to 0.064 cm. The yield for the original and improved tubes was
compared for both the cases of random (independent random
variation of the helix pitch of each section) error and systematic
(same helix-pitch variation for all the sections) error [5]. A max-
imum helix-pitch tolerance of 3% was considered. Three hundred
different tubes were simulated for each value of helix-pitch error.
For the purpose of this study, a tube was considered acceptable if
the average gain was included in the 1.5% range with respect to
the nominal value and the flatness was lower than 6%. A remark-
able yield improvement is obtained for both random (Fig. 2) and
systematic (Fig. 3) errors. The small histograms included in the
figures show that the percentage increment of the yield obtained
for the different helix-pitch error values is, in some cases, higher
than 25%.
CONCLUSION
TWT yield degradation in case of small-signal gain, caused by the
tube sections with lower helix pitch, has been studied. The analysis
of the small-signal gain per unit length of a helix slow-wave
structure provides useful information for predicting the yield be-
haviour. It was demonstrated that a suitable adjustment of the
helix-pitch profile, hence maintaining similar small-signal gain
performance, significantly improves the yield.
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1. J.X. Qiu, D.K. Abe, T.M. Antonsen Jr., B.G. Danly, and B. Levush,
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timization for applications in digital communications with multilevel
modulations, IEEE Trans Microwave Theory Tech 51 (2003), 1911–
1919.
2. D.K. Abe, B. Levush, T.M. Antonsen Jr., D.R. Whaley, and B.G. Danly,
Design of a linear C-band helix TWT for digital communications
experiments using the Christine suite of large-signal codes, IEEE Trans
Plasma Sci 30 (2002), 1053–1062.
3. D.M. Goebel, R.R. Liou, W.L. Menninger, X. Zhai, and E.A. Adler,
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4. V. Srivastava, R. Carter, B. Ravinder, A.K. Sinha, and S.N. Joshi,
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5. D.M. Goebel, A.C. Schneider, W.L. Menninger, and J.M. Weekly, Gain
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© 2005 Wiley Periodicals, Inc.
EXPLORATION OF THE INTEGRATION
OF A PASSIVE COPLANAR ISOLATOR
BASED ON THIN MAGNETIC FILMS
S. Capraro,
1,2
T. Rouiller,
1
M. Le Berre,
3
J. P. Chatelon,
1
B. Bayard,
1
D. Barbier,
3
and J. J. Rousseau
1
1
DIOM
University of Saint-Etienne
23 rue Michelon
42023 Saint-Etienne cedex, France
2
LAHC
University of Savoie
Bat. Le Chablais
73376 Le Bourget du Lac, France
3
LPM
UMR 5511, INSA Lyon
7 av. Jean Capelle
69621 Villeurbanne cedex, France
Received 14 March 2005
ABSTRACT: In order to miniaturize and self-bias a coplanar isolator,
new method is to use thin magnetic films. The results presented in this
paper show that this component behaves like an isolator in the 50-GHz
band. The influence of the magnetic and conductor films for increasing
the isolator properties is studied. © 2005 Wiley Periodicals, Inc.
Microwave Opt Technol Lett 46: 435– 437, 2005; Published online in
Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.
21009
Key words: coplanar isolator; barium ferrite; thin films; passive com-
ponent
1. INTRODUCTION
Microwave ferrite devices allow the control of microwave propa-
gation using a static or switchable DC magnetic field. The devices
can be reciprocal or nonreciprocal, linear or nonlinear, and their
development requires an understanding of magnetic materials,
electromagnetic theory, and microwave-circuit theory. It appears
that these devices will continue to play an important role in
microwave technology in future years.
Nowadays, these components use bulk materials which are not
compatible with the technology of semiconductors. Thus, the
achievement of thin films can be a major step in the miniaturiza-
tion of such electronic devices [1].
Figure 3 Comparison between the yield (percentage of acceptable tubes)
of the TWT computed for the original and the improved helix-pitch profile
for the case of systematic error (the inset shows the yield-improvement
histograms)
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS / Vol. 46, No. 5, September 5 2005 435