Rate Coefficient for the Reaction SiO + Si
2
O
2
at T ) 10-1000 K
Andre ´ S. Pimentel,* Francisco das C. A. Lima, and Albe ´ rico B. F. da Silva
Departamento de Quı ´mica e Fı ´sica Molecular, Instituto de Quı ´mica de Sa ˜ o Carlos, UniVersidade de Sa ˜ o
Paulo, AV. Trabalhador Sa ˜ o Carlense, 400 Caixa Postal 780, Sa ˜ o Carlos, SP 13560-970 Brazil
ReceiVed: August 23, 2006; In Final Form: October 9, 2006
The reaction paths for the formation of Si
3
O
3
molecules have been investigated at high level ab initio quantum
chemical calculations by using the QCISD method with the 6-311++G(d,p) basis set. The cis-Si
2
O
2
isomer
does not participate in the chemical mechanism for the formation of Si
3
O
3
molecules. Although the SiO +
cis-Si
2
O
2
reaction is exothermic and spontaneous, it is not expected to explain the growth mechanism of
Si
3
O
3
in the interstellar silicate grains of circumstellar envelopes surrounding M-type giants. The reaction of
SiO with cyclic Si
2
O
2
molecules is exothermic, is spontaneous, and has a nonplanar transition state. The
Gibbs free energy for the transition state formation, (ΔG
0
#
), is around 5.5 kcal mol
-1
at 298 K. The bimolecular
rate coefficient for this reaction, k
T
, is about 1 × 10
-12
cm
3
molecule
-1
s
-1
at 298 K and in the collision limit,
1.5 × 10
-10
cm
3
molecule
-1
s
-1
, at 500 K. The activation energy, E
a
, is about 8 kcal mol
-1
. The enthalpy of
Si
3
O
3
fragmentation is 53.9 kcal mol
-1
at 298 K. The SiO + cyclic Si
2
O
2
reaction is expected to be the most
prominent reaction path for the Si
3
O
3
formation in interstellar environment and fabrication of silicon nanowires.
Introduction
Silicon monoxide (SiO) materials are the most abundant
constituent on Earth, and SiO itself, one of the most reactive
molecular species composed of cosmically abundant mineral
forming elements.
1,2
The SiO space density in dust is around
3.0 × 10
22
molecules cm
-3
, and the SiO column density in
circumstellar shells is around 4.1 × 10
14
molecules cm
-2
.
3,4
It
has been conjectured that the formation of pure oligomeric
silicon monoxides ((SiO)
x
, x ) 2 to 4) should provide the first
surface for the kinetics of condensed phase growth of amorphous
interstellar silicate grains in the circumstellar envelopes sur-
rounding M-type giants.
5,6
Furthermore, this growth mechanism
seems to involve the formation of silicates through the loss of
Si atoms during the nucleation and growth of SiO oligomers.
7,8
They also play a crucial role in many areas of modern
technology, including nanotechnology, glass, and fiber optics
industries. The most important example for the application of
silicon monoxide is the enhancement in the growth of silicon
nanowires during the synthesis of these materials, suggesting
the importance of the small silicon monoxide clusters studied
in this article.
7,8
Therefore, the study of the elementary associa-
tion reactions underlying the nucleation process of SiO is critical
in order to understand the formation process of interstellar
silicate grains and growth of silicon nanowires.
Unfortunately, it is difficult to experimentally study the
formation of SiO oligomers due to the high SiO reactivity and
the unlikely isolation of the target chemical reaction. Ab initio
quantum chemical calculations may offer an alternative way
for the understanding of the chemistry of interstellar silicate
grains formation in a wide variety of astronomical regions, and
the growth of silicon nanowires in different manufacture
conditions. For instance, the temperature in circumstellar shells
ranges from 1000 down to 10 K,
3,4
and in the production process
of silicon nanowires it is from 300 to 1300 K. The SiO vapor
pressure is around 2 × 10
-6
Torr at 400 K and evaporates
completely at 1400 K. Thus, there is an appreciable SiO
concentration in the gas phase of circumstellar shells and the
production process of silicon nanowires.
Snyder and Raghavachari (1984)
9
have performed a quantum
chemical calculation for the dimerization of silicon monoxide.
Using fourth-order Møller-Plesset perturbation theory (MP4),
they have found a value of -43.0 kcal mol
-1
for the heat of
formation of the dimer, which is in excellent agreement with
the only experimental value, -44.6 ( 3.0 kcal mol
-1
.
10
They
have also calculated the potential energy surface for this reaction
and found no evidence for an energy barrier. Schnockel et al.
(1989)
11
have investigated the Si
2
O
2
dissociation by MP4 and
found that it is + 43.7 kcal mol
-1
. Friesen et al. (1999)
12
have
also calculated the oligomerization energies for the SiO species
using density functional theory (DFT). They have obtained
-48.0 and -57.6 kcal mol
-1
for the SiO dimerization and
trimerization reactions, respectively. Lu et al. (2003)
7
also
calculated by DFT that the Si
2
O
2
and Si
3
O
3
dissociation energies
are 46.7 and 54.8 kcal mol
-1
, respectively. However, using the
MP2 theory, they found 41.6 and 50.4 kcal mol
-1
for the same
reactions. Thus, it is very important to apply a higher level of
theory to this system in order to achieve a better agreement
with this data as indicated by Avromov et al.
8
Anderson et al. (1968),
13
Anderson and Ogden (1969),
14
and
Ogden (1977)
15
have shown by infrared analysis that SiO, cyclic
Si
2
O
2
and Si
3
O
3
molecules are important intermediates in the
SiO oligomerization process. Hastie et al. (1969)
16
assigned
additional features to pentameric SiO species as well as
confirming those features assigned in the literature.
14
Later,
Khanna et al. (1981)
17
have also assigned basically the same
features using infrared and Raman spectroscopies. However,
they have also suggested that the “open” cis-Si
2
O
2
structure is
likely to be generated in the process. In fact, it has a higher
reactivity compared with the cyclic structure due to their
unpaired electrons. Thus, the cis-Si
2
O
2
species may readily react
with SiO monomeric or dimeric species to form higher SiO
* To whom correspondence should be addressed. E-mail:
pimentel@iqsc.usp.br.
13221 J. Phys. Chem. A 2006, 110, 13221-13226
10.1021/jp065462z CCC: $33.50 © 2006 American Chemical Society
Published on Web 11/16/2006
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Publication Date (Web): November 16, 2006 | doi: 10.1021/jp065462z