Chinese Physics B (Chin. Phys. B) Complete coverage of reduced graphene oxide on silicon dioxide substrates * Jingfeng Huang a)b) , Melanie Larisika c)d) , Hu Chen a) b) , Steve Faulkner e) , Myra A. Nimmo b)e) , Christoph Nowak c)d) , , and Alfred Tok Iing Yoong a)b)† a) School of Materials Science and Engineering, Nanyang Technological University, Blk N4.1, Singapore 639798 b) Institute for Sports Research, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 c) Austrian Institute of Technology (AIT) GmbH, Donau-City Str.1, Vienna, 1220, Austria. d) Centre for Biomimetic Sensor Science, 50 Nanyang Drive, Singapore, 637553 e) School of Sport, Exercise and Health Sciences, Loughborough University, JB.1.07, Leicestershire, United Kingdom LE113TU Reduced graphene oxide (RGO) has the advantage of an aqueous and industrial-scalable production route. No other approaches can rival the RGO field effect transistor platform in terms of cost (<US$1) and portability (millimetre scale). However the large deviations in the electrical resistivity of this fabricated material prevents it from being used widely. After an ethanol chemical vapour deposition (CVD) post- treatment to Graphene Oxide with ethanol, carbon islets are deposited preferentially at the edges of existing flakes. With a 2-hour treatment, the standard deviation in electrical resistance of the treated chips can be reduced by 99.95%. Thus this process could enable RGO to be used in practical electronic devices. Keywords: graphene oxide, reduced graphene oxide, graphene growth, field effect transistor. PACS Code: 81.05.ue, 68.65.Pq, 85.30.Tv, 68.55.ag. 1. Introduction For the successful commercial development of disposable sensors, a low-cost industrial- scalable yet sensitive transducer is required[1, 2]. Reduced graphene oxide (RGO) fits these descriptions[3], however, the large deviations in the electrical resistivity of this fabricated material prevents it from being used widely[4]. This deviation is caused by the heterogeneous and incomplete coverage of RGO on the fabricated surfaces. The limitation could be solved by growing RGO to obtain complete coverage of the transducer on silicon dioxide surface using ethanol chemical vapor deposition (CVD) as presented in this paper. Additionally this process can be easily employed by the semiconductor manufacturers as it is compatible with existing techniques in the industry. * Project supported by the Institute for Sports Research (ISR) of Nanyang Technological University (NTU), the National Institute for Health Research (NIHR) Diet, Lifestyle & Physical Activity Biomedical Research Unit based at University Hospitals of Leicester and Loughborough University, and the International Graduate School Bio-Nano-Tech; a joint PhD program of University of Natural Resources and Life Sciences Vienna (BOKU), the Austrian Institute of Technology (AIT) and NTU. † Corresponding author. E-mail: MIYTok@ntu.edu.sg