International Research Journal of Engineering and Technology (IRJET) e-ISSN: 2395 -0056 Volume: 03 Issue: 10 | Oct -2016 www.irjet.net p-ISSN: 2395-0072 © 2016, IRJET | Impact Factor value: 4.45 | ISO 9001:2008 Certified Journal | Page 1 SYNTHESIS AND CHARACTERIZATION OF ZIRCONIA DOPED ELECTRICAL PORCELAIN INSULATOR Gourav Jawale 1 , Neeraj Kumar 2 , Dr. M.R. Majhi 3 1 M.Tech Student, Indian Institute of Technology-BHU, Varanasi, India 2 M.Tech Student, Indian Institute of Technology-BHU, Varanasi, India 3 Associate Professor Indian Institute of Technology-BHU, Varanasi, India ---------------------------------------------------------------------***--------------------------------------------------------------------- Abstract - Now a day the proper power distribution is the important task that must get done in a proper manner. As far as power handling capability of insulator is concern it becomes challenging when the insulator fails to provide required value and bearable when subjected to the high valued signal Voltage or Surge). In this journal we have examined the properties of a basic building block i.e Kaolin (Al2Si2O5(OH)4), Feldspar (potassium) KAlSi3O8 and Quartz (SiO2) of insulator along with the help of Zirconium oxide as a doping agent. In the whole process we first analyze the base composition and then compare with the Zirconium Oxide (zirconia) doped sample and reach to the conclusion. The techniques that we have used are X- Ray Diffraction, Scanning electron microscope, Bending Strength, Apparent Porosity, bulk density and Dielectric Strength that depend on the phase of Zirconium Oxide. Another aspect of this experiment is to make a sample so that layers of SiO2 that we are using on MOS devices like MOSFET, SCR etc. In order to make the device more compact, SiO2 layer can’t be reduce by <1nm if it get reduce then it can raise the problem of tunneling current and it increases exponentially as the thickness of the layer decreases so in order to solve the problem (more compactness) this material can be useful. Key Words: Porcelain Insulators, Alumina, Zirconia, Devices insulating layer, Feldspar, Kaolin. 1. INTRODUCTION Insulator is the one which comprises of the specialty to block a certain signal and not allow to pass through it. Electrical Porcelain Insulator playing a vital role in the modern power distribution system [2]. The basic building block of this Insulator is clay that is Silica, Kaolin and feldspar [3]. The kaolin provides the plasticity behaviour Silica is responsible for mechanical strength and feldspar is for the flux which can let the material to attain the behaviour at lower temperature instead to go at the higher one. Now a day high strength electrical porcelain insulator becomes a need as far as transmission lines (OHE cable insulator) and power distribution industry is concern [2]. Mostly the porcelain insulator are having high bending strength but still they got damage because of lightening with thundering or surge exertion on it[1]. In this experiment we are using Zirconium oxide [8] as a doping agent which has compared with the base composition of the insulator material. The another aspect of this experiment is to use the qualities of Zirconium oxide[4] i.e. high strength and stability at high temperature and also high dielectric strength as compared to SiO2 layer on the gate terminal of Metal oxide Semiconductor. The recent research also focused to develop the other oxides material that has more dielectric constant The properties of insulating material are: 1. It must have high mechanical strength. 2. It must have very high dielectric constant in order to withstand very high value signal [2]. 3. It must have high insulation resistance to hinder the path of current that goes to the earth and cause to damage the intelligence of the signal. 4. It physical as well as electrical properties must not get vary when subjected to high temperature. The reasons that can cause qualities of insulator degrade are as follows: 1. Because of vandalism damage can cause to an insulator so it should be strong enough to bear the shock. 2. Due to the erosion its can get degrade. 3. Explosive shattering can also be the big reason for failing of insulator. 4. Mostly porcelain insulator have a risk of internal puncture so flash under is also a major reason to degrade its behaviour. To analyse the sample we have gone through XRD (X-Ray Diffraction), Scanning Electron microscope (SEM), Bending Strength porosity and density tests and with the help of XRD we will analyse and compare the phase obtained in the Zirconium oxide containing sample in the form of pallets. On the basis of phase we conclude with the specific properties of that particular phase (Mullite) [11]. As far as electrical properties are concern by the help of XRD analysis we can also comment on the dielectric behaviour of the sample by comparing it on the basis of phase. Zirconium oxide that gives the value of dielectric constant in between 20 to 25 that is relatively high as compared to SiO2 [13]used on the gate terminal of MOS [6]. The region between 600 o C to 1300 o C is the important zone in order to transform the clay into a rigid substance so therefore we sintered it at 1200 o C. Zirconium oxide has three structural phases. [3] these are: