Grain Boundary Blocking Effect in Yttria Stabilized Zirconia Thin Films
Meike V.F. Schlupp
a
, H. Ma
a
, J. Martynczuk
a
, M. Prestat
a
, and L. J. Gauckler
a
a
Nonmetallic Inorganic Materials, Department of Materials, ETH Zurich, Switzerland
The cross-plane oxygen ion conductivity of yttria stabilized
zirconia thin films prepared by aerosol assisted chemical vapor
deposition is strongly influenced by the thin film microstructure.
Thin films with highly textured columnar grains oriented parallel
to the current direction exhibit significantly higher conductivity
than thin films with randomly oriented nanocrystalline
microstructure, where ionic transport proceeds through the
numerous grain boundaries. The total conductivity of columnar
AA-CVD thin films is consistent with literature values on oxygen
ion conduction through chemically pure YSZ grains as determined
for microcrystalline samples, while that of the nanocrystalline
specimens is similar to corresponding specific grain boundary
conductivities.
Introduction
The ionic conductivity of nanocrystalline yttria stabilized zirconia (YSZ) has been
extensively discussed in literature (1, 2, and references therein). The grain boundaries of
pure YSZ are found to be partially blocking to ionic transport, and the specific grain-
boundary conductivity of stabilized zirconia is approximately two orders of magnitude
lower than the grain conductivity. However, most data is based either on nanocrystalline
bulk samples, or on thin films measured in in-plane geometry.
In this study, we present a reliable procedure for electrical cross-plane measurements by
impedance spectroscopy to determine the ionic conductivities of 8mol% Y
2
O
3
stabilized
zirconia (8YSZ) thin films (250-500nm thickness) obtained by non-vacuum aerosol
assisted chemical vapor deposition (AA-CVD). AA-CVD is an economical thin film
deposition method based on the production of gaseous precursor molecules in a simple
non-vacuum ultrasonic spray pyrolysis setup. Film growth proceeds from the gas phase
resulting in smooth and homogeneous thin films over several square centimetres (3). Our
results show that the microstructure strongly influences the conductivity of YSZ thin
films.
Experimental
8YSZ thin films were prepared from zirconium and yttrium 2,4-pentanedionate
precursors dissolved in ethanol at a concentration of 0.025M or 0.005M using synthetic
air as carrier gas. More details on the deposition procedure can be found elsewhere (3).
YSZ depositions were conducted on single-crystal sapphire substrates coated with ~10nm
tantalum as adhesion layer and ~100nm platinum as back electrode. Platinum top
ECS Transactions, 45 (1) 189-192 (2012)
10.1149/1.3701308 ©The Electrochemical Society
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