International Research Journal of Engineering and Technology (IRJET) e-ISSN: 2395 -0056
Volume: 02 Issue: 09 | Dec-2015 www.irjet.net p-ISSN: 2395-0072
© 2015, IRJET ISO 9001:2008 Certified Journal Page 2427
Synthesis and Characterization of Polyaniline Doped Metal Oxide
Nanocomposites
Megha Sawarkar
1
, S A Pande
2
,P S Agrawal
3
1.
Research Scholar, Dept of Applied Chemistry, Laxminarayan Institute of Technology, Nagpur-440 033, India
2.
Associate Prof., Dept of Applied Physics, Laxminarayan Institute of Technology, Nagpur-440 033, India
3.
Associate Prof. ,Dept of Applied Chemistry, Laxminarayan Institute of Technology, Nagpur-440 033, India
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Abstract - The ZnO-Pani and CdO-Pani
nanocomposites were prepared by sol-gel method
using their respective nitrates. It is a simple and low
cost method to prepare nanocomposite. The prepared
samples were characterized by using Scanning
Electron Microscope (SEM), X-ray diffraction (XRD)
and Fourier Transform Spectroscopy (FTIR) to get
surface morphology, idea of getting particles of
nanosized range so that further characterization can
be done, to study the electrical properties of
synthesized nanocomposite and measure the
resistivity.
Key words: Metal Oxide nanoparticles, polyaniline,
structural properties.
1. Introduction
Mutual interactions between inorganic semiconductors
and conducting polymers may give rise to interesting
properties which are significantly different from those of
individual components [1]. Nanostructures and
nanocomposites of conducting polymers have emerged as
a new field dedicated to the creation of smart materials for
use in future technologies [2-3]. Blending or encapsulation
of inorganic nanoparticles in Intrinsically conducting
polymer matrix is believed to be an easy route to prepare
and design nanocomposites where delocalized -electrons
can interact with inorganic nanoparticles, resulting in
materials of unique or better properties [4]. Many studies
on preparation of polymer nanocomposite have been
reported in the quest to develop new advanced materials
with improved mechanical, electrical, optical and catalytic
properties or to improve conduction mechanism in
electronic devices. These materials have found their use in
many electronic and nanoelctronic devices.
Polyaniline (PANI) is a promising conducting polymer due
to its easy synthesis, environmental stability and high
electrical conductivity on doping with protonic acids [5-6].
The highly ordered structures such as crystalline or self
assembled structures of ideal conducting polymer
-
like electrical conductivity .To induce an ordered
structure, other materials acting as filler for the composite
are required [7-12]. The preparation of PANI composites
with various materials has received great attention
because of their unique properties and applications in
various electrical and electronic devices. Several reports
dealing with the preparation of conducting composites
such as Fe3O4:PANI, MnO2:PANI, TiO2:PANI and
ZrO2:PANI [13,14], as well as preparation and
characterization of ZnO:PANI composites have been
published [15-17] . Due to these properties it has been
studied extensively for making optical and electronic
devices [18- 20] like: light emitting diodes, solar cells,
transducers, photo detectors, etc. In particular, ZnO
nanostructures (NSs) are of intense interest since they can
be grown by a variety of methods with different
morphologies. Nanostructure ZnO can be synthesized by
various methods such as physical, chemical,
electrochemical, etc. but chemical route has attracted
much attention due to the flexibility of controlling the
shape and size of the structures by tuning the different
growth conditions. [21- 26] To utilize theses properties of
ZnO in LEDs application, another p-type material is
necessary as ZnO NRs is unintentionally n-type material.
Since mostly polymers are p-type and their special
properties like low cost, low power consumption, flexible
and easy manufacturing all makes polymers a better
choice to use with ZnO NPs to fabricate a flexible device
that utilizes the properties of both materials for large area
lighting and display application. [27, 28]
On the other hand Cadmium oxide (CdO) is n-type
semiconductor used as a transparent conductive material
prepared as a transparent conducting film back. Cadmium
oxide has been used in applications such as photodiodes,