International Journal of Physics, 2017, Vol. 5, No. 4, 110-115 Available online at http://pubs.sciepub.com/ijp/5/4/2 ©Science and Education Publishing DOI:10.12691/ijp-5-4-2 Annealing Effect on (SnO 2 ) 0.3 :(In 2 O 3 ) 0.7 Solar Cell Prepared by PLD Technique Abdulmajeed E. Ibrahim 1 , Kadhem A. Aadim 2 , Qutaibah A. Abduljabbar 1,* 1 Department of Physics, University of Tikrit/College of Education 2 Department of Physics, University of Baghdad / College of Sciences *Corresponding author: qutaibahalrawi5378@gmail.com Abstract Indium tin oxide (ITO) thin films were produced by Q- switched Nd:YAG laser with wavelength (1064 nm) has 800 mJ peak energy on In 2 O 3 :SnO 2 target with 0.3 ratio on p-type Si and on porous Si to fabricated solar cell. The as deposited and annealed thin films on glass substrates were characterized by X-ray diffraction Atomic force microscopy (AFM), UV-visible absorbance and Hall effect measurements. Then the fabricated solar cells examined in the dark and under illumination for SnO 2 :In 2 O 3 /p-Si and SnO 2 :In 2 O 3 /Psi/p-Si annealed and as deposited samples. Keywords: solar cell, pulse laser, porous-Si Cite This Article: Abdulmajeed E. Ibrahim, Kadhem A. Aadim, and Qutaibah A. Abduljabbar, “Annealing Effect on (SnO 2 ) 0.3 :(In 2 O 3 ) 0.7 Solar Cell Prepared by PLD Technique.” International Journal of Physics, vol. 5, no. 4 (2017): 110-115. doi: 10.12691/ijp-5-4-2. 1. Introduction Now a day there are many techniques utilized to enhance solar cell efficiency enhance solar cells efficiency [1]. The generic solar cell is a structure consisting of two active layers, thin heavily doped top layer called the emitter or window layer and thick moderately doped bottom layer, called the base or absorber with opposite doping [2]. We need to study the optical, structural [3], morphological [4] and electrical properties for used material as window in solar cells on the side where light enters, to reach optimum efficiency [5] X- ray diffraction used to characterize obtained films crystallinety. The d hkl spacing between crystals planes can deduced by X-ray diffraction using Bragg's law [6] hkl n 2d sin    (1) where Ө is diffraction angle and λ is the used XRD wavelength. Scherrer equation formula used to calculate crystalline size utilize the peaks broadening [7]. 0.9λ G.S FWHM . cos(θ)  (2) Where λ is the x-ray wavelength for k α transition from Cu target (1.5406 Å), FWHM is full width at half maximum and θ is the angle of diffraction. Several parameters are used to characterize solar cells. A solar cell under illumination is characterized by the following parameters: the Short-circuit current, the open-circuit voltage, the fill factor and the power conversion efficiency [8]. Fill Factor indicates the quality of current-voltage characteristics and it depends on the ability of charges to reach the electrodes which is governed by recombination processes. The full factor is directly affected by the values of the cell's series and shunt resistances [9]. The solar cell efficiency is the ratio for outcome power to incident light power density [10]. 2. Experimental Part A porous silicon structure is prepared by electrochemical etching of silicon substrate of (111) orientation with a resistivity (4 -10) Ω. cm and the etching cell is made of Teflon. The electrochemical cell used has two electrode configurations with a platinum electrode as cathode and silicon wafer as anode. The etching times is chosen to be 10 min and current (30) mA. The samples are dipped in (48%) concentration of (HF) acid in mixing ratio (1 : 1) HF: ethanol with the aid of diode laser source as an illumination sources. However, the addition of ethanol to HF eliminates hydrogen and ensures complete infiltration of HF solution which further improves the uniform distribution of porosity and thickness. In 2 O 3 with purity (99.9 %) and SnO 2 powder purity (99.98 %) by FERAK company, England were mixed with In 2 O 3 :SnO 2 ratio 30 % in gate mortar to use it to make pellet target as a disk of 1.5cm diameter using hydraulic piston under pressure of 6 tons. SnO 2 : In 2 O 3 thin films were prepared on glass, p-Si and porous-Si substrates by Q switched pulsed laser (Huafei Tongda Technology- DIAMOND-288 pattern EPLS) λ = 1064 nm with 800 mJ peak power inside a vacuum chamber at vacuum (10 -3 Torr) using double stage rotary pump. The incident beam coming through a window making an angle of 45° with the target surface. The substrate is placed