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COMMUNICATION
Identifying Fundamental Limitations in Halide Perovskite
Solar Cells
Wei Lin Leong,* Zi-En Ooi, Dharani Sabba, Chenyi Yi, Shaik M. Zakeeruddin,
Michael Graetzel, Jeffrey M. Gordon, Eugene A. Katz, and Nripan Mathews
DOI: 10.1002/adma.201505480
by defect levels,
[12]
interfacial states,
[13]
energetic disorder,
[14]
as well as first-order
[15]
and bimolecular recombination.
[16]
qV
oc
for perovskite solar cells is typically in the range of 0.9–1.1 eV
at room temperature ( q is the elementary charge). The small
difference E
g
- qV
oc
≈ 0.5 eV (at standard test conditions of
one-sun irradiance, AM 1.5G spectrum and cell temperature
T = 298 K) compares favorably to other photovoltaic technolo-
gies, being lower than organic or dye-sensitized cells (≈0.7 eV),
quantum-dot cells (≈0.8 eV), polycrystalline CdTe (≈0.6 eV),
and only slightly higher than crystalline silicon (≈0.4 eV).
[17]
The small energy loss implicitly indicates a modest degree of
both electronic disorder and recombination losses in halide
perovskites, remarkable for a low-temperature solution-
processed semiconductor.
Our focus on the temperature dependence of the cell’s prin-
cipal performance parameters is motivated by the need to:
i) elucidate the dominant photogeneration and recombination
processes, ii) estimate basic upper bounds for the key perfor-
mance parameters,
[18–20]
and iii) be able to evaluate cell perfor-
mance at the PV temperatures reached under actual field condi-
tions (>330 K). The temperature range studied here (80–360 K)
was chosen to be broad enough both to illuminate basic car-
rier dynamics and to allow a more complete PV evaluation.
Experiments and analyses of this nature are sparse,
[21–23]
in part
due to cell degradation in air that compromises measurement
reproducibility, including pronounced hysteresis in curves of
current density J as a function of voltage V.
Here, we report our measurements of nominally nondegraded
mesoporous perovskite cells, performed in an evacuated optical
cryostat, with little hysteresis that would not otherwise allow for
the equilibrium behavior of the device to be evaluated.
[24]
We
first show the temperature-dependent external quantum effi-
ciency (EQE) measurements and extract the effective bandgap
energy E
g
* of the absorber from the sub-bandgap region of the
spectral EQE to study the effect of perovskite bandgap changes
due to phase transitions on the photovoltaic performance.
Subsequently, we analyzed the temperature-dependent device
characteristics. Two distinct regimes of the temperature and
irradiance dependence of V
oc
were observed: a linear regime at
higher temperature with a logarithmic irradiance ( I) depend-
ence; and a saturation regime at lower temperature where V
oc
is
invariant to both irradiance and temperature. We will show that
these limits can be understood in terms of recombination in the
bulk of the perovskite absorber and that interface recombina-
tion plays a minor role. Trap-assisted recombination due to the
presence of shallow states in the perovskite absorber is found to
be the dominant recombination mechanism. Our results also
Organic–inorganic halide perovskite solar cells have quickly
become the most efficient of solution-processed photovoltaic
(PV) technologies.
[1]
These cells are able to combine the
appealing aspects of both inorganic thin-film and organic pho-
tovoltaics. The organometal trihalide perovskite absorbers, such
as methylammonium lead halide, CH
3
NH
3
PbX
3
(X = Cl, Br,
or I), are highly crystalline even when processed at tempera-
tures as low as 70–100 °C.
[2]
Their favorable PV characteristics
include tunability of optoelectronic properties,
[3]
high optical
absorption (≈10
4
cm
-1
),
[4]
low exciton binding energy,
[5,6]
long-
range charge transport,
[7]
and efficient charge collection
[8]
at the
contacts. Power conversion efficiencies (PCEs) of 15–21% have
already been demonstrated.
[9,10]
Despite rapid advances in device performance, estab-
lishing the fundamental efficiency limits of perovskite cells
has remained elusive, which prompts delving into the fun-
damental physics governing device operation. Of particular
interest is understanding their high open-circuit voltage ( V
oc
)
relative to their bandgap energy E
g
≈ 1.55 eV.
[11]
V
oc
reflects
basic thermodynamic loss mechanisms and is strongly affected
Dr. W. L. Leong, Dr. Z.-E. Ooi
Institute of Materials Research
and Engineering (IMRE)
Agency for Science, Technology
and Research (A*STAR)
2 Fusionopolis Way, Innovis #08-03,
Singapore 138634, Singapore
E-mail: leongwl@imre.a-star.edu.sg
Dr. D. Sabba, Prof. N. Mathews
Energy Research Institute @NTU (ERI@N)
Research Techno Plaza
X-Frontier Block, Level 5
50 Nanyang Drive, Singapore 637553, Singapore
Dr. C. Yi, Dr. S. M. Zakeeruddin, Prof. M. Graetzel
Laboratory of Photonics and Interfaces
Ecole Polytechnique Fédérale de Lausanne (EPFL)
Lausanne CH 1015, Switzerland
Prof. J. M. Gordon, Prof. E. A. Katz
Department of Solar Energy and Environmental Physics
Jacob Blaustein Institutes for Desert Research
Ben-Gurion University of the Negev
Sede Boqer Campus 84990, Israel
Prof. N. Mathews
School of Materials Science and Engineering
Nanyang Technological University
50 Nanyang Avenue, Singapore 639798, Singapore
Adv. Mater. 2016, 28, 2439–2445
www.advmat.de
www.MaterialsViews.com