International Journal of Computer Engineering and Applications, Volume XII, Special Issue, August 18, www.ijcea.com ISSN 2321-3469 Anjali Kumari, Sweta Kumari, Poulomi Ganguly 1 STUDY OF CU2ZNSNSE4 ABSORBER LAYER BY VACUUM BASED METHOD Anjali Kumari 1 , Sweta Kumari 2 , Poulomi Ganguly 3 1 Assistant Professor EEE Department, RVS College of Engineering and Technology, Jamshedpur, India 2 Assistant Professor ECE Department, RVS College of Engineering and Technology, Jamshedpur, India 3 Assistant Professor EEE Department, College of Engineering and Technology, Jamshedpur, India ABSTRACT Cu2ZnSnSe4 have acquired as the most promising absorber material group in thin film technology due to the abundance and environmental friendly constituent elements, tunable direct band gap energy ranging from 1.0 to 1.5 eV, and large absorption coefficient. Lattice parameters calculated from X- ray diffraction result are perfectly matching with the standard values (a=5.67, b= c=11.39 Å). Optical and electrical properties were studied by means of UV-VIS and Hall measurement system. Cu:Zn:Sn:Se composition of the film was found to be 2:1:1:4. This report presents a vacuum fabrication route for CZTSe thin film preparation with suitable properties for solar cell application The synthesised powder was characterised by X-Ray diffraction technique (XRD), Raman Scattering Spectroscopy, Energy Dispersive Analysis of X-Ray (EDAX) and UV–Visible Absorption Spectra. The XRD Patterns of the synthesised compound show the preferred orientation of (112), (220) and (312) planes, confirming the Kesterite structure of CZTS. The chemical composition of the powder was analysed by EDAX and shows good atomic stoichiometry of the constituent elements in the CZTS compound. The UV–Vis absorption spectra confirm the direct band- gap of about 1.45 eV, which is quite close to the optimum value for the semiconductor material as an absorber in solar-cells. Keywords—CZTSe, Vacuum process, XRD, RAMAN, solar cell. I. INTRODUCTION Cu2ZnSnSe4(CZTSe) have recently drawn the attention of investigators as promising alternate solar cell absorber layers to CuInGaSe2 (CIGS)[1-3],the cells made of which exhibited a record efficiency of 20.3–20.4%, but contains expensive elements In and Ga[4]. Cu2ZnSnSe4 (CZTSe) is one of the most promising absorber layer materials for low- cost thin film solar cells. CZTSe has a suitable optical band gap of 1.5eV and a large absorption coefficient of over 10 4 cm _1 . CZTS, CZTSe and Cu2ZnSn(S,Se)4 (CZTSSe) solar cells with laboratory efficiencies of 8.4%, 9.15% and 12.6% , respectively have been reported. The CZTSe is a p-type quaternary compound semiconductor with Kesterite crystal structure where, in comparison with CIS ternary compound, the selenium (Se) is substituted with sulphur and the rare metal In is replaced with zinc and tin. Each components of CZTS is abundant in the earth’s crust and possesses relatively low toxicity[5-