Optik 138 (2017) 372–376 Contents lists available at ScienceDirect Optik j o ur nal ho me pa ge: www.elsevier.de/ijleo Short note Dose dependence effect of thermoluminescence process in TlInS 2 :Nd single crystals Ahmed Kadari a,∗ , Serdar Delice b , Nizami Mamed Gasanly c,d a Department of Chemistry, Faculty of Sciences of the Matter, Ibn Khaldoun University of Tiaret, BP P 78 Zaaroura, Tiaret, Algeria b Department of Physics, Hitit University, 19030 C ¸ orum, Turkey c Department of Physics, Middle East Technical University, 06800 Ankara, Turkey d Virtual International Scientific Research Centre, Baku State University, 1148 Baku, Azerbaijan a r t i c l e i n f o Article history: Received 12 December 2016 Accepted 15 March 2017 Keyword: Thermoluminescence Trap parameters OTOR Dose response TlInS2:Nd a b s t r a c t In this paper, thermoluminescence (TL) properties of TlInS 2 :Nd single crystals were mod- eled using an interactive model (one trap and one kind of recombination center). The simulated work presented here was based on the experiment conducted by Delice et al. The thermoluminescence glow curve of TlInS 2 :Nd single crystals has been characterized by one main peak at 26 K, which confirm the presence of one active electron trap level in the forbidden band of this material. The model used in this work is similar to other mod- els cited previously in the literature. The calculated glow curve was in good agreement with the experimental one. Our numerical results show also that the thermoluminescence intensity increases with the increase of the dose rate (D). In the selected dose level range; the thermoluminescence response is linear and no saturation can be observed. © 2017 Elsevier GmbH. All rights reserved. 1. Introduction Lately, ternary compounds of semiconductor materials have become a significant subject for researchers and studies on them have gain considerable momentum. Their optical, structural and electrical capabilities [1–4] show that they carry remarkable potential to be used in producing optoelectronic devices. Ternary TlInS 2 is a member of semiconducting mate- rials consisted of III and VI elements in periodic table and it possesses layered structure. The ionic-covalent bonds occur between the atoms whereas the weak van der Waals bonds are created between the sequential two-dimensional layers that are perpendicular to the (001) direction. The space group of C 6 2h characterizes the crystal symmetry of TlInS 2 , which has monoclinic structure at room temperature [5,6]. Among ternary layered crystals, TlInS 2 was mostly preferred material by researchers. The physical properties of TlInS 2 crystal were widely investigated and reported in literature [7–11]. Several experimental techniques and simulations under the light of the theoretical models were applied for different materials in literature to characterize the trapping process of defects. TlInS 2 single crystals were studied by using the thermally stimulated current (TSC), photoluminescence (PL) and thermoluminescence (TL) measurements. The TSC inves- tigations achieved in 10–90 K [12] and 100–300 K [13] temperature regions revealed the existence of five trapping levels centered at energies of 12, 14 meV [12] and 400, 570 and 650 meV [13], respectively. The PL spectra detected between 500 and 850 nm and in the temperature range 11.5–100 K established the existences of one donor level at 250 meV and one acceptor level at 20 meV in the band gap [14]. Five trapping levels with thermal activation energies of 14, 19, 350, 420 and ∗ Corresponding author. E-mail addresses: kadariahmed 14@yahoo.fr, ahmed.kadari27@gmail.com (A. Kadari). http://dx.doi.org/10.1016/j.ijleo.2017.03.062 0030-4026/© 2017 Elsevier GmbH. All rights reserved.