Electronics and Nanotechnology, April 12-14, 2011, Kyiv, Ukraine 91 Interstitial aspect of the crystal lattice L.N. Korolevich 1 , A.V. Borisov 1 , M.K. Rodionov 1 1 National Technical University of Ukraine “Kyiv Polytechnic Institute”, Kyiv, Ukraine Abstract – In article described a few phenomenological aspects of crystal lattice. Due to entering a definition of formulae complex, important results are obtained. By this way is proved advantages of using between-junction aspect as model for considering crystal lattice. Keywords – crystal lattice, formulae complex, interstitial aspect of the crystal lattice. I. INTRODUCTION Charge of surface states plays an important role in the physics of MOS devices. The prediction of the surface state density (Nss), and, consequently, the charge at the interface of two materials, particularly at the interface semiconductor-insulator is an important problem of MIS-electronics [1-3]. To solve this problem it is necessary to consider the geometry of the bonds at the interface of two materials. II. INTERSTITIAL ASPECT The main disadvantage of the classical aspect of the crystal lattice is requirments of an infinity crystal. This disadvantage can be clearly seen from trying of solving the problem of matching the two crystals at their interface. For simplicity, we assume that both the crystal possessed not only of the same symmetry, but also have equal lattice parameters and moreover both of them are describes by primitive crystal lattices. Hence, physically, they differ only by type of material particles (molecules, ions, atoms) so we denote points for the first crystal lattice by the black dots, and for the second one – white ones. For first we must describe the original (non-contact) situation (Fig. 1). It is easy to see that both crystals are described by the same Bravais lattice, and mathematically they are identical. Fig.1. Two crystal lattices (classic aspect). For the second and last step by the law of oriented growth (epitaxy) is a simple combination of these lattices. However, such combination under classical aspect is prohibited. In other hands, under interstitial aspect for each Bravais lattice we can match some another lattice which produced by certain shift in certain direction. In such ways, we must enter a new physical conception – formulae complex (FC). FC is minimum amount of material per one point under classical aspect of crystal lattice or, in other words, the minimum amount of material wich contained in a parallelepiped of lattice under interstitial aspect of crystal lattice. By this way, we can give the new phenomenological definition of the crystal lattice. So, crystal lattice is such places in crystal material where probability of finding FC is equal to zero. In this way, solving mentioned above problem is easy. For example, Fig. 1 can be redrawing as shown on Fig. 2. Fig.2. Two crystal lattices (interstitial aspect). III . CONCLUSION Physical phenomenological approach to examine the crystal lattice suggests that: 1. perhaps an infinite number of consistent methods for describing the crystal lattice, although the most important of these will be only two - the classical aspect and interstitial one; 3. interstitial aspect is applicable to finite-size crystals. REFERENCES [1] Литовченко В.Г., Горбань А.П. Основы физики микроэлектронных систем металл– диэлектрик–полупроводник. – К.: Наук. думка. – 1978. – 316 с. [2] Красников Г.Я., Зайцев Н.А Система кремний – диоксид кремния субмикронных СБИС. – М.: Техносфера. – 2003. – 384 с. [3] Nanoelectronics and Information Technology: Advanced Electronic Materials and Novel Devices. Editor R. Waser. – Weinheim: Wiley- VCH GmbH & Co, KGaA. – 2003. – 1002 с.