© 2019, IJSRPAS All Rights Reserved 147 International Journal of Scientific Research in ______________________________ Research Paper . Physics and Applied Sciences Vol.7, Issue.3, pp.147-150, June (2019) E-ISSN: 2348-3423 DOI: https://doi.org/10.26438/ijsrpas/v7i3.147150 Structural, Morphological, Optical and PL Studies of Neodymium Doped ZnS Glass Plate by Nebulizer Spray Pyrolysis Method A. Jesu Jebadev 1 , M.Karunakaran 2 *, K. Deva Arun Kumar 3 , S.Valanarasu 4 1,2 Department of Physics, Alagappa Government Arts College, Karaikudi, India- 630003 3,4 Department of Physics, Arul Anandar College, Karumathur, India – 625514 * Corresponding Author: tvdkaruna@gmail.com, Tel.: +91-8122841591 Available online at: www.isroset.org Received: 18/Apr/2019, Accepted: 12/May/2019, Online: 30/Jun/2019 Abstract— Herein we have present the preparation of Nd doped ZnS thin films on glass substrate by simple nebulizer spray pyrolysis (NSP) method at 450 0 C. XRD, SEM, and UV-Vis Spectrometer were used to analyze the Structural, morphological, and optical behavior of the prepared samples. Nature of polycrystalline hexagonal structure with no secondary phases was confirmed by X-ray analysis. Extra particle creation on the surface of the Nd doped thin film was observed in high magnified SEM images. Room temperature PL studies depicts that the luminance behavior of the parent sample was enormously changed during the Nd element interstitial with ZnS lattice. Optical band gap value varies from 3.51 eV to 3.58 eV for 3% Nd doped ZnS film ascribed the increasing of film thickness and diminishing of film transparencies. Keywords— Rare earth, Thin film, Nebulizer spray pyrolysis, Photoluminescence, Band gap. I. INTRODUCTION Naturally, II-VI based semiconductor with wide direct band gap (E g =3.67 eV) of ZnS has Luminescence behavior and it is used as a photo catalyst for a long time. Besides the contribution of CdS, toxic free ZnS have many Opto - electronic applications such as , UV light emitting diodes, sensors , Modulators [1] etc., In addition, it act as a good reflector and dielectric filter [2]. Meanwhile, additions of transition or rare earth metal in ZnS were arising new kinds of pictures in luminescence recently. Even though, there are many reports available on transition metal doped like Mn, Cu, Al, Pb etc., and their co-doped ZnS thin film, only countable numbers of papers behind on rare earth metal doping. The main reason regarding on this lack may be expensive and unavailability of rare earth material. At the same time we should concern their unique behavior when doped with any host lattice. Because, some trivalent rare earth ions change vigorously in parent lattice structure and their optical behavior than transition metal. So, herein we synthesized rare earth Nd doped ZnS film and characterized their behavior using various parameters. Core ZnS thin film was prepared by various techniques such as SILAR [3], Sputtering [4], Electro deposition [5] , ALE [6], CBD [7], CVD [8] spray pyrolysis [9] etc., Apart from these, herein we tried to attempt on making homogeneous transparent thin film by simplest NSP techniques.NSP is a kind of Spray technique and it is low cost and more suitable for large scale thin film preparation. II. MATERIALS AND METHODS Thin films of host and Nd doped ZnS were prepared with analytical grade Zinc chloride [ZnCl 2 ], Thiourea [CH 4 N 2 S] and Neodymium acetate monohydrate [Nd(CH 3 COO) 2 .H 2 O] (purchased from Sigma-Aldrich and Alfa Aeser) by NSP technique. To remove any impurities, glass substrates were cleaned by hot chromic acid, de-ionized water, and acetone. For a parent precursor solution 0.2 M (ZnCl 2 ) and 0.2 M (CH 4 N 2 S) were dissolved into 10 ml (Isopropyl alcohol and de-ionized water with 3:1 ratio) solvent and stirred well for 10 min. To make 3 % Nd doped film, neodymium acetate monohydrate [Nd (CH 3 COO) 2 .H 2 O] was dissolved in the prepared parent solution and adding of three drops of HCl make clear homogeneous solution. These solutions were taken in a nebulizer container of volume 10 ml and sprayed with Carrier gas pressure of 1.5 Kg/cm 2 on the heated(450 0 C) glass substrate (located at 25mm from the nozzle) continuously to get a uniformly smooth film.