Adsorption of H
2
on Ga
24
N
24
cluster; A density functional theory
investigation
M. Aarabi, Z. Mahdavifar, S. Noorizadeh
*
Chemistry Department, Faculty of Sciences, Shahid Chamran University of Ahvaz, Ahvaz, Iran
article info
Article history:
Received 5 May 2017
Received in revised form
8 June 2017
Accepted 9 June 2017
Available online 15 June 2017
Keywords:
Hydrogen storage
Adsorption
Gallium nitride clusters
Fukui function
DFT
Reduced density gradient
abstract
Molecular adsorption of hydrogen on Ga
24
N
24
cluster is explored using Density Functional Theory. It is
shown that the adsorption of H
2
molecules on gallium atoms surface of the cluster is a quasi-molecular
adsorption with E
ad
¼19.7 kJ mol
1
, which is favorable for hydrogen-storage materials. This adsorption
is nearly position-independent but is not dissociative. The natural bond orbital analysis, reduced density
gradient scatter graphs as well as Fukui functions and density of states spectra confirm the weak
interaction between s-bonding electrons of H
2
molecule with the gallium atom of the cluster. The results
may open a window to new hydrogen-storage devices at moderate pressures.
© 2017 Elsevier Ltd. All rights reserved.
1. Introduction
During the past few decades, many attempts have been made to
replace fossil fuels with greener and more sustainable alternatives.
Since the hydrogen fuels do not create any carbon pollutants, they
are among the most investigated energy sources [1]. But, hydrogen
has some physical characteristics that make it difficult to store in
large quantities without taking up a significant amount of space.
Therefore, hydrogen adsorption on different substrates, including
transition metal clusters [2], carbon nanotubes [3,4], boron nitride
sheets and nanotubes [5], fullerene-like clusters [6e8] and metal-
organic frameworks [9e13] have been explored as a possible
route towards removing this difficulty [14]. Computational in-
vestigations show that all of the mentioned adsorbents do not
behave in the same manner. Thermodynamic calculations predict
that the adsorption energies that would lead to an efficient cyclic
adsorption/desorption process at room temperature and moderate
pressures are in the narrow range of 0.1e0.6 eV per hydrogen
molecule (9.6e57.9 kJ mol
1
) [15,16]. In fact, this range of energy is
sufficient to compensate the unfavorable decrease of entropy dur-
ing the adsorption process [17].
The III-V group semiconductor compounds show a wide range of
both technological [18e22] and biological [23] applications.
Although both ring- and cage-type configurations could be
assumed for B
n
N
n
clusters, a crossover from the ring to the cage is
observed for n > 12 [24]. Also, it is theoretically shown that the
fullerene-like B
12
N
12
,B
16
N
16
and B
28
N
28
clusters are magic stable
Boron Nitride (BN) cages [25], and B
12
N
12
spheroid, which is built
by eight hexagons and six squares, is energetically the most stable
one [26]. Bekenev and Pokropivny reported the first synthesis of
stable covalent crystals built by B
12
N
12
fullerenes [27]. Therefore,
Matxian et al. [28] attempted to investigate the stability of different
B
12
N
12
fullerene dimers. It is shown that the dimer formed by co-
valent interactions facing squares (S-S) are more stable than those,
which are due to hexagon facing a hexagon (H-H). It should be
mentioned that during the formation of a dimer, the structure of
each monomer remains nearly unaltered. In fact, instability of H-H
dimer could be due to form less stable B-B and N-N bonds.
A comparison between Ga
n
N
n
and B
n
N
n
shows that gallium
nitride fullerene-like structures could be also possible for the same
cluster sizes as have been predicted or observed for boron nitrides
[29]. An investigation is also made between thermodynamic sta-
bility of medium-sized Ga
n
N
n
clusters (n ¼ 4e12), and it is found
that the Ga
12
N
12
nanocluster is the most stable one among them
[26]. Therefore, many attempts have been made to synthesize
different GaN nanostructures [30e35]. Zhao ad coworkers [26]
* Corresponding author.
E-mail address: noorizadeh_s@scu.ac.ir (S. Noorizadeh).
Contents lists available at ScienceDirect
Vacuum
journal homepage: www.elsevier.com/locate/vacuum
http://dx.doi.org/10.1016/j.vacuum.2017.06.021
0042-207X/© 2017 Elsevier Ltd. All rights reserved.
Vacuum 143 (2017) 209e216