Available online at www.sciencedirect.com ScienceDirect Materials Today: Proceedings 18 (2019) 1852–1860 www.materialstoday.com/proceedings 2214-7853 © 2019 Elsevier Ltd. All rights reserved. Selection and/or Peer-review under responsibility of INTERNATIONAL CONGRESS ON SEMICONDUCTOR MATERIALS AND DEVICES. ICSMD-2017 On the profile of temperature dependent main electrical parameters in Al/P3HT/p-Si (MPS) structures at low temperatures E. Yükseltürk a, *, M. Çotuk a , M.M. Bülbül a , Ş. Altındal a , S.Zeyrek b a Department of Physics, Faculty of Sciences, Gazi University, Ankara, 06500, Turkey b Department of Physics, Faculty of Science and Art, Dumlupinar University, Kütahya, 43120, Turkey Abstract In order to good interpret the conduction mechanism in the Al/P3HT/p-Si (MPS) structure, both the capacitance-voltage (C-V), and conductance-voltage (G/-V) characteristics of the structure are carried out in the wide temperature (120-300 K) and voltage ( ±5 V by 50 mV steps), respectively. The C-V plot shows a peak behavior in the accumulation region for each temperature due to the presence of R s and interfacial layer. When the value of C starts to decrease in the accumulation region, G/ starts to increase due to inductive behavior of the sample. The obtained barrier height from the reverse bias C -2 vs V plot decreases with increasing temperature as linearly and has -3.68x10 -4 eV/K negative temperature coefficient which is very closed to temperature coefficient of Si band-gap (-4.73x10 -4 eV/K). The value of activation energy (E a ) was obtained from the slope of Arrhenius plot for various bias voltages and it changed from 5.75 eV (for 2 V) and 4.1 eV (for 5 V), respectively. In addition both the temperature dependent profile of N ss and R s were obtained by using the Hill-Coleman and Nicollian-Brews methods, respectively, and they decrease with increasing temperature due to reordering and restructure of the surface charges under temperature and electric field. In order to see the effect of R s on the C-V and plot G/-V plots, they were corrected. All experimental results were confirmed that the R s , interfacial polymer layer, N ss and temperature are more effective on the conduction mechanism especially at low temperature. © 2019 Elsevier Ltd. All rights reserved. Selection and/or Peer-review under responsibility of INTERNATIONAL CONGRESS ON SEMICONDUCTOR MATERIALS AND DEVICES. Keywords: Al/P3HT/p-Si (MPS) type; C-V-T and G/-V-T measuments; Temperature dependent main electrical parameters * Corresponding author. Tel.: +90-312-202 12 47 E-mail address: yukselturkesra@gmail.com