International Journal of Emerging Technology and Advanced Engineering Website: www.ijetae.com (ISSN 2250-2459, ISO 9001:2008 Certified Journal, Volume 10, Issue 06, June 2020) 33 A Study into Comparison of Voltage Sense Amplifier and Charge Transfer Sense Amplifier Sayak Mukherjee 1 , Anik Mukherjee 2 1 University of Calcutta 2 Camellia Institute of Technology Abstract — In this paper graphical comparison of voltage sense amplifier and charge transfer sense amplifier will be performed using P-SPICE simulation technique. In modern memory circuit advantages and disadvantages of both sensing amplifier by performance and graphical nature are discussed here. Different types of voltage sense amplifiers are also graphically and analytically compared here, full complementary positive feedback sense amplifier is more operative than differential sense amplifier and voltage latch type sense amplifier. In the case of circuit with lower power and low cost operations VSA is most common choice but for high speed, low time delay, low power dissipative memory circuit CTSA is the best. Keywords — P-SPICE, Memory cell, SRAM, Voltage sense amplifier, Charge transfer sense amplifier, speed of operation, power dissipation, circuit design I. INTRODUCTION In modern electronics world SRAM memories are occupying more than 70% of system –on-chip area (SOC), as a result performance of SOC provide a significant impact upon various characteristics of SRAM alike leakage, power, area, speed etc.as long as power is flowing through the circuit. Being a non-volatile memory SRAM is completely depends on power. Sense amplifiers are used in SRAM memories to improve the capacity, rise the speed and maintain the power dissipation as low as possible. In sense amplifiers size of memory is dependent on the parasitic capacitive nature of the bit lines. At the time of charging or discharging of memory cells sense amplifiers can also sense a small difference of voltage at bit line and amplify the signal accordingly. Fig.1 shows a schematic diagram of structure of memory array containing inputs, column decoder, sense amplifier, memory unit and row decoder. In the memory cell array sense amplifier reduce signal propagation time. There are mainly two kinds of sense amplifier to operate in a memory array, precharge mode and sensing mode. Afore every read cycle precharge mode happens to precharge the bit lines, hence memory cell store the voltage caused by bit lines difference. In sensing mode small difference between two bit lines voltage are measured and amplify the difference at output. Based on functional circumstances sense amplifiers are mainly three types Voltage Sense Amplifier (VSA), Current Sense Amplifier (CSA) and Charge Transfer Sense Amplifier (CTSA).