International Research Journal of Engineering and Technology (IRJET) e-ISSN: 2395-0056 Volume: 07 Issue: 04 | Apr 2020 www.irjet.net p-ISSN: 2395-0072 © 2020, IRJET | Impact Factor value: 7.529 | ISO 9001:2008 Certified Journal | Page 6480 DESIGN AND DEVELOPMENT OF LOW POWER WIDE FREQUENCY BAND RKTG PAIR PUSH PULL AMPLIFIER Raj Kumar 1 1 Department of Physics & Electronics, Dr. R.M.L. Avadh University, Ayodhya, U.P., India ------------------------------------------------------------------***---------------------------------------------------------------------- Abstract: In this research paper we have investigated push-pull amplifier circuit using RKTG pair amplifier to optimized the performance of the amplifier. The proposed circuit works for low input power with high voltage gain and very wide band frequency (ZHz). The proposed circuit shows good temperature stability and sufficient voltage gain at low value of inductance having value of pico-Henry. Keywords: Distortion, Frequency Response, Push Pull Amplifier, RKTG pair and Temperature stability. INTRODUCTION The large signal amplifier as power amplifier is a building block for all radio frequency communication. It provides sufficient power to an output load to drive output power device also the push-pull amplifier is most popular versatile power amplifier. The push-pull amplifier is frequently preferred over the other power amplifier to extend high efficiency and make distortion less using CMOS technology. But now the present days, electronic market is required amplification of very low input voltage signal at very high frequency band without any distortion. This is a major problem for the researchers and designers of electronics fields. They have studied and designed properly by many investigator with the help of cascading of transistors, Darlington pair, RC coupled transistor, Transformer coupled transistors etc. [1]-[5]. This paper presents the push pull amplifier with complementary compound pair (RKTG pair) using CMOS technology. This technology has two major useful characteristics like very low static power consumption and high noise immunity [6],[7]. In this research paper, we used additional elements like – Complementary compound pair, Very low value of inductor at output port, high value of register (in Mega ohm) as output load of push pull amplifier which provide increased band width and gain. A distortion identified by nonlinearity of the dynamic characteristics may be eliminated by using push pull class B power amplifier [8], [9]. When two CMOS inverters are connected is series having an ac input signal, voltage divided biasing with load at 100 KΩ shown as a reference circuit in fig (1). Then the simulated result show frequency band in KHz [10]-[15]. It can be improved by replacing the CMOS inverter with complementary compound pair and very low value of inductor (pH) and RL (M ohm) as a output load of power amplifier. EXPLORATORY CIRCUIT Fig-1 CMOS Push Pull amplifier (reference circuit)