Review Article Development of Ferroelectric Oxides Based Resistive Switching Materials 1 Peiyuan Guan, 2 Yuandong Sun, 1 Tao Wan, 1 Xi Lin, 1 Zhemi Xu and 1 Dewei Chu * 1 School of materials science and engineering, University of New South Wales Sydney 2052, Australia 2 University of Akron 302 E Buchtel Ave, Akron, OH 44325, USA Resistive random access memory (RRAM) is one of the most promising candidates that satisfies the requirements of new generation non-volatile memories (NVM), as a consequence of its high density, outstanding scalability and low power consumption. The review is based on a summary of recent studies in ferroelectric oxides based resistive switching materials and devices. It highlights the various ferroelectric oxide materials with resistive switching (RS) behavior and the underlying mechanisms including filament-type and interface-type mechanism. In the end, the challenge in current RRAM for future high density data storage applications is addressed. Keywords: Resistive switching, Ferroelectric oxide, Non-volatile memory * Corresponding Author: d.chu@unsw.edu.au, Tel.61-(0)2-9385-5090 1. Introduction Memristor is the fourth fundamental electronic component other than resistors, capacitors, and inductors. In 1971, Cai et al. advanced the existence of memristor in the study of the relationship of voltage (v), current (i), magnetic flux (ψ) and charge (q), according to mathematical logic integrity. Figure 1 shows the interrelationship of these four basic components. Memristors have attracted much attention because of their unique non-linear electrical properties, and potential application for resistive random access memory (RRAM). In recent years, resistive switching (RS) effects in many oxides materials have attracted intensive interests for application of the RRAM. RRAM plays a key role in the non-volatile memory family due to its irreplaceable benefits, such as fast sub-ns operation speed, 1,2 low operation voltage, low power consumption, 3,4 electrode-active layer-electrode sandwiched simple structure, outstanding high-density which potentially decrease to less than 10 nm, and high-durability that the switching cycles up to 10 12 .(Ref.5) 5 Figure 1. Fundamental components of the electronic circuit: resistor, capacitor, inductor and memristor. 6,7