Solar Cells, 15 (1985) 239 - 245 239
INCOHERENT-LIGHT INDUCED DIFFUSION OF PHOSPHORUS
AS A DOPING PROCEDURE FOR LOW-COST SILICON SOLAR CELLS
A. NYLANDSTED LARSEN
Institute of Physics, University of ~arhus, DK-8000 ~arhus (Denmark)
L. DRUD NIELSEN*
Physics Laboratory III, Technical University of Denmark, DK-2800 Lyngby (Denmark)
(Received March 4, 1985; accepted May 1, 1985)
Summary
•Diffusion of phosphorus into p-type silicon from spun-on phosphoro-
silica films has been induced by means of incoherent light from a xenon arc-
lamp. A suitable process for solar cell preparation appears to be heating for
20 s to 1000 °C, followed by gradual cooling. Sheet resistivities of around
35 ~2/[] may be achieved under these conditions, with no appreciable
degradation of the bulk-material properties. Doping profiles measured by the
Hall effect exhibit a maximum concentration of 2 - 3 X 1020 cm -3 at the
silicon surface and a junction depth of about 1500 A. A number of test-cell
batches have been prepared from single- as well as polycrystalline material,
and very favourable and reproducible spectral-response characteristics have
been found. In spite of the non-optimized cell design and a rather primitive
antireflective coating, AM 1 efficiencies of up to 12.7% (single-crystal cell)
and 8.2% (polycrystalline cell) have been recorded.
1. Introduction
The need to cut down the manufacturing costs of silicon solar cells has
led to extensive studies of new doping procedures that are also suited to the
preparation of p/n ,junctions in polycrystalline materials. Various beam
processing techniques [1] have attracted considerable interest, either for
annealing damaged layers after ion implantation or as means of inducing
diffusion of dopants from deposited surface layers.
We have found the latter approach particularly interesting as it allows
p/n junction formation without vacuum or special-gas processes and in
*Present address: Institute of Circuit Theory and Telecommunication, Technical
University of Denmark, DK-2800 Lyngby, Denmark.
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