Surface Review & Letters 13 (4) Aug 2006 (Aceptado) 1 Physical properties obtained from measured thermal profiles in the film/substrate bimaterial system R. D. Maldonado, A. I. Oliva * Centro de Investigación y de Estudios Avanzados del IPN, Unidad Mérida, Depto. de Física Aplicada, Km. 6 Ant. Carr. Progreso, A.P. 73-Cordemex, 97310 Mérida, Yucatán, México. Tel. 9991 242136 ext. 2136. e-mail: oliva@mda.cinvestav.mx H. G. Riveros Instituto de Física, UNAM, A.P. 20-384, 01000, México D.F. Tel. 5556 225091, e-mail: riveros@fisica.unam.mx Abstract The microelectronic devices are formed by a substrate that supports the functional thin film material. The thermal, electrical and mechanical properties of the system depend strongly on the interfacial properties between film and substrate. The interfacial nature in a film/substrate system originates the thermal contact resistance ( R tc ). We discuss the thermal and electrical behavior in a film/substrate system (bimaterial system) making emphasis in the R tc of the interface. Au/glass samples with different thickness were prepared by thermal evaporation for experimentation. The bimaterial system was heated by a DC electrical current to obtain thermal profiles. Film and substrate thermal profiles acquired with high resolution combined with a developed bimaterial model are used as an alternative method to estimate the R tc value at atmospheric pressure, the electrical resistivity ρ, and the thermal resistive coefficient a r in the bimaterial system. The calculated R tc values ranged from 7.7x10 -4 to 1.2x10 -3 m 2 K/W for the Au/glass system, in good agreement with previously reported values. The ρ values obtained from thermal profiles data presents a more reliable value due to the global character than the local values measured by the four-probe technique. Dependence with film thickness was also found in the α r coefficient determination. Keywords : thermal resistance, metallic films, bimaterial system, electrical resistivity * To whom the correspondence should be addressed.