________________________________________ * Author for correspondence; E-mail: bhavaneeg@gmail.com; Ph.: +91-8122062621 Int. J. Chem. Sci.: 14(1), 2016, 1-8 ISSN 0972-768X www.sadgurupublications.com SYNTHESIS AND ELECTRICAL CHARACTERISATION OF BISMUTH DOPED YTTRIUM OXIDE G. BHAVANI a , S. GANESAN b , S. SELVASEKARAPANDIAN c , S. MONISHA c and M. PREMALATHA c a Department of Physics, Jansons Institute of Technology, COIMBATORE (T.N.) INDIA b Sri Shakthi Institute of Engineering and Technology, COIMBATORE (T.N.) INDIA c Materials Research Center, COIMBATORE (T.N.) INDIA ABSTRACT Nanosized metal oxides, in a variety of morphologies (such as particles, spheres, rods, and sheets), have attracted a great deal of attention in wide areas of research and technology. Yttrium oxide, as an important member among rare-earth compounds, has been actively studied in the recent years. It is one of the most promising elements to act as gate materials for MOSFETs instead of SiO 2 . Hence Yttrium oxide is selected as the host lattice for the study and the simple, cost effective precipitation methods are chosen as synthesis methods. Pure yttrium oxide and bismuth doped yttrium oxide samples of three doping concentration are prepared by sol-gel method. FTIR studies confirm the presence of functional groups in the samples. XRD studies show amorphous nature with broad hump for pure yttrium oxide samples and better crystallinity is observed for bismuth doped yttrium oxide samples.From the electrical studies it has been observed that the maximum conductivity achieved was for pure sample. Further, it is also observed that the pure sample has the highest dielectric constant values than the bismuth doped yttrium oxide samples. It may due to the introduction of holes in the host yttrium oxide. Dielectric studies show that loss tangent is found to be less at high frequency. Key words: INTRODUCTION Y 2 O 3 possesses some unique properties. Y 2 O 3 has a wide energy band gap, high electrical resistivity range (10 11 -10 12 ohm/m), dielectric permittivity (11-15), and electric strength (10 8 -10 9 Vm -1 ); it also shows low dielectric losses (0.01-0.03) and good transparency in a wide spectral range with little light diffusion 1-4 . Due to these properties, Y 2 O 3 is a prospective material for antireflection and protective coatings, interference mirrors