Design and Verification of a PECVD fabricated Multi-Layer Nano-
Scale Photovoltaic Device
Shima Hajimirza
The University of Texas at Austin
Dept. of Mechanical Engineering
Austin, Texas, USA
Email: Shima@ices.utexas.edu
John R. Howell
The University of Texas at Austin
Dept. of Mechanical Engineering
Austin, Texas, USA
Email: jhowell@mail.utexas.edu
Milo Holt
The University of Texas at Austin
Dept. of Electrical and Computer
Engineering
Austin, Texas, USA
Sayan Saha
The University of Texas at Austin
Dept. of Electrical and Computer
Engineering
Austin, Texas, USA
Deji Akinwande
The University of Texas at Austin
Dept. of Electrical and Computer
Engineering
Austin, Texas, USA
Sanjay Banerjee
The University of Texas at Austin
Dept. of Computer and Computer
Engineering
Austin, Texas, USA
Abstract
This paper summarizes the results of computational and
experimental studies of an enhanced thin film solar structure.
The cell structure consists of a reflective aluminum layer
beneath an 80nm absorbing layer of amorphous silicon, coated
with a top layer of transparent and conductive indium tin oxide
(ITO). The structure is mounted on a glass substrate. We first
use constrained optimization techniques along with numerical
solvers of the electromagnetic equations to specify the layer
thicknesses of the design for maximized efficiency. Numerical
analysis suggests that solar absorptivity in the thin film silicon
can be enhanced by a factor of 2. The proposed design is then
fabricated using Plasma Enhanced Chemical Vapor Deposition
techniques, along with a control sample of bare silicon absorber
for comparison. AFM imaging and spectrophotometry
experiments are applied to estimate the realized thin film
dimensions, deposition error, unwanted oxidation volume and
the resulting reflectivity spectra. Comparisons of the measured
and simulated reflectivity spectra of the fabricated cells, as well
as Monte Carlo simulations based on incorporating random
geometry errors in the numerical simulations suggest that the
measured spectra are in accordance with the expected curves
from simulations.
1. Introduction
Amorphous silicon (a-Si) is an inexpensive choice of active
layer material for thin film photovoltaic devices. Compared to
crystalline silicon, a-Si has fewer constraints (e.g. temperature,
substrate choice, etc.), can be deposited with smaller
dimensions, and has a significantly higher solar absorption at
the same thickness [1]. In addition, compared with other
existing semiconductors, silicon is an abundant and well-
studied material for photo-electronic uses. In spite of those
benefits, in thin film solar cells made of a-Si, the very small (<
100nm) thickness of silicon, and the less desirable electric
properties of a-Si (compared to crystalline silicon) significantly
hinder photonic absorption and photon-to-electricity conversion
of the device, respectively.
Mechanical adjustments (a.k.a. light trapping) to the thin film
structure can modify the optical deficiencies of silicon to a
large extent. Most commonly, light trapping is done by
depositing extra layers of coating, cladding or grating on either
sides of the thin film silicon. These surfaces modify the
effective path length of light in the absorbing material by the
same mechanisms as in the thick film cells, as well as effects
that only appear in sub-wavelength dimensions. More
specifically, thin and transparent antireflective coatings (such as
transparent conductive oxide layers) introduce a gradual change
in the effective refractive index of the absorbing layer to reduce
surface reflectivity [2]. Furthermore, coatings designed to
change the refractive index on the rear side of a device can
reflect energy back through the silicon for an additional round
of absorption [3-6]. Sub-wavelength plasmonic surfaces and
metallic particles can produce forward scattering and localize
light below the diffraction limit, effects which both lead to
enhanced absorption. Metallic gratings and particles of even
Proceedings of the ASME 2013 Heat Transfer Summer Conference
HT2013
July 14-19, 2013, Minneapolis, MN, USA
HT2013-17271
1 Copyright © 2013 by ASME
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