Semiconductor Science and Technology PAPER Design of AlGaN-based lasers with a buried tunnel junction for sub-300 nm emission To cite this article: Shamsul Arafin et al 2019 Semicond. Sci. Technol. 34 074002 View the article online for updates and enhancements. This content was downloaded from IP address 164.107.165.230 on 12/06/2019 at 14:31