Controlling surface carrier density by illumination in the transparent conductor La- doped BaSnO 3 Edward B. Lochocki, Hanjong Paik, Masaki Uchida, Darrell G. Schlom, and Kyle M. Shen Citation: Appl. Phys. Lett. 112, 181603 (2018); doi: 10.1063/1.5020716 View online: https://doi.org/10.1063/1.5020716 View Table of Contents: http://aip.scitation.org/toc/apl/112/18 Published by the American Institute of Physics Articles you may be interested in Interface energy band alignment at the all-transparent p-n heterojunction based on NiO and BaSnO 3 Applied Physics Letters 112, 171605 (2018); 10.1063/1.5029422 Transition regime from step-flow to step-bunching in the growth of epitaxial SrRuO 3 on (001) SrTiO 3 Applied Physics Letters 112, 182902 (2018); 10.1063/1.5026682 Oxygen-vacancy-mediated dielectric property in perovskite Eu 0.5 Ba 0.5 TiO 3- δ epitaxial thin films Applied Physics Letters 112, 182906 (2018); 10.1063/1.5025607 Synthesis science of SrRuO 3 and CaRuO 3 epitaxial films with high residual resistivity ratios APL Materials 6, 046101 (2018); 10.1063/1.5023477 Adsorption-controlled growth of La-doped BaSnO 3 by molecular-beam epitaxy APL Materials 5, 116107 (2017); 10.1063/1.5001839 Stability of the oxygen vacancy induced conductivity in BaSnO 3 thin films on SrTiO 3 Applied Physics Letters 111, 172102 (2017); 10.1063/1.4996548