Microelectronic Engineering 66 (2003) 547–552 www.elsevier.com / locate / mee DLTS study of bonded interface in silicon-on-insulator structures annealed in hydrogen atmosphere a, b a a b * I.V. Antonova , J. Stano , O.V. Naumova ,V.P. Popov ,V.A. Skuratov a Institute of Semiconductor Physics, pr. Lavrentieva 13, Novosibirsk 630090, Russia b FLNR, Joint Institute for Nuclear Research, Dubna 141980, Russia Abstract The results of the comparative Charge Deep Level Transient Spectroscopy study of Si / SiO interfaces in 2 silicon-on-insulator structures prepared by wafer bonding and hydrogen slicing and annealed in hydrogen ambient in the temperature range of 430–670 8C are presented in the report. At bonded interface the trap transformations under hydrogen annealing are strongly discriminated from passivation of traps at Si / thermal SiO interface. It was found that heat treatments at T . 430 8C inhibit generation of new traps and changes in 2 trap spectra in bonded interface.  2002 Elsevier Science B.V. All rights reserved. Keywords: Silicon-on-insulator; Si / SiO interface; Traps; Bonded interface; Annealing 2 1. Introduction Thermal treatment ( T # 600 8C) of structures with Si/SiO interface in hydrogen ambient, as a 2 general rule, leads to passivation of interface states [1]. The annealing at temperatures higher than 600 8C generates new traps at Si / SiO interface [2]. We have demonstrated recently that spectrum of 2 traps in bonded Si / SiO interface is different from that for traps in Si / SiO interface prepared by 2 2 thermal oxidation [3]. This difference was explained with an absence of transient SiO layer in ˜ o bonded interface. The aim of the present work was to compare the transformation of traps located in two different Si/SiO interfaces of the SOI structure under thermal annealing in hydrogen ambient. The first 2 interface was prepared by bonding of silicon wafer with an oxidized one. The second interface was prepared by the wet thermal oxidation process at 1000 8C. The transformation of states at bonded interface is found to discriminate from that at the thermal interface. The strong generation of traps is *Corresponding author. Tel.: 17-3832-33-2493; fax: 17-3832-33-2771. E-mail address: antonova@isp.nsc.ru (I.V. Antonova). 0167-9317 / 02 / $ – see front matter  2002 Elsevier Science B.V. All rights reserved. doi:10.1016/S0167-9317(02)00934-6