This is the accepted version of the following article: López-González, J. M., Martín I., Ortega P., Orpella A., and Alcubilla R. (2014), Numerical simulations of rear point-contacted solar cells on 2.2 Ωcm p-type c-Si substrates, Prog. Photovolt: Res. Appl., 23, 69–77, doi: 10.1002/pip.2399 ] , which has been published in final form at http://onlinelibrary.wiley.com/doi/10.1002/pip.2399/abstract Graphical abstract Numerical simulations of rear point contacted solar cells on 2.2 Ωcm p-type c-Si substrates Juan M. López-González, I. Martín*, P. Ortega, A. Orpella and R. Alcubilla * e-mail: isidro.martin@upc.edu In this work, we highlight the importance of a 3D accurate modelling of rear point-contact p- type c-Si solar cells particularly when the c-Si substrates are not highly-doped, like the 2.2 Ωcm c-Si ones used in this work as experimental reference. For such relatively low-doped substrates, the simpler and widely-used 1D approach leads to important deviations in V oc an FF that significantly impacts on the optimum rear pitch predicted by the simulations.