Impurity enhancement of the 1.54‐μm Er3+ luminescence in silicon J. Michel, J. L. Benton, R. F. Ferrante, D. C. Jacobson, D. J. Eaglesham, E. A. Fitzgerald, Y.‐H. Xie, J. M. Poate, and L. C. Kimerling Citation: Journal of Applied Physics 70, 2672 (1991); doi: 10.1063/1.349382 View online: http://dx.doi.org/10.1063/1.349382 View Table of Contents: http://scitation.aip.org/content/aip/journal/jap/70/5?ver=pdfcov Published by the AIP Publishing Articles you may be interested in Deposition and 1.54 μm Er 3+ luminescent properties of erbium-doped hydrogenated amorphous silicon thin films by electron cyclotron resonance plasma enhanced chemical vapor deposition of SiH 4 with concurrent sputtering of erbium J. Vac. Sci. Technol. A 17, 3230 (1999); 10.1116/1.582047 Correlation between visible and infrared (1.54 μm) luminescence from Er‐implanted porous silicon Appl. Phys. Lett. 69, 1903 (1996); 10.1063/1.117616 The erbium‐impurity interaction and its effects on the 1.54 μm luminescence of Er3+ in crystalline silicon J. Appl. Phys. 78, 3874 (1995); 10.1063/1.359904 Electrochemical Er doping of porous silicon and its room‐temperature luminescence at ∼1.54 μm Appl. Phys. Lett. 65, 983 (1994); 10.1063/1.112169 Local structure of 1.54‐μm‐luminescence Er3+ implanted in Si Appl. Phys. Lett. 61, 2181 (1992); 10.1063/1.108288 [This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions. Downloaded to ] IP: 136.160.90.132 On: Wed, 19 Aug 2015 17:39:56