Journal of Alloys and Compounds 401 (2005) 205–211 Effect of annealing under enhanced hydrostatic pressure on the microstructure of Cz–Si:H, He A. Misiuk a,∗ , A. Shalimov b , B. Surma c , J. Bak-Misiuk b , A. Wnuk c a Institute of Electron Technology, Al. Lotnik´ ow 46,02-668 Warsaw, Poland b Institute of Physics, Polish Academy of Sciences, Al. Lotnik´ ow 32/46, 02-668 Warsaw, Poland c Institute of Electron Materials Technology, W´ olczy´ nska133, 01-119 Warsaw, Poland Received 17 June 2004; received in revised form 4 October 2004; accepted 4 October 2004 Available online 24 May 2005 Abstract The microstructure of Czochralski silicon (Cz–Si) co-implanted with H 2 + at E = 135 keV and He + at 75 keV to a total dose D H+He =5 × 10 16 cm -2 (Si:H, He) and of reference Si:H prepared by H 2 + implantation to the same total dose (E = 135 keV, D H =5 × 10 16 cm -2 ), and annealed/treated at 723 and 923 K under hydrostatic argon pressure up to 1.1 GPa was investigated by X-ray high-resolution diffractometry and photoluminescence measurements. The treatment-induced effects depend both on the kind of implanted atoms (hydrogen + helium or hydrogen) and on the treatment parameters (temperature, pressure and treatment time). A qualitative explanation of the observed effects has been proposed. © 2005 Elsevier B.V. All rights reserved. Keywords: Silicon; Implantation; Hydrogen; Helium; Annealing; Hydrostatic pressure; Microstructure 1. Introduction Single crystalline silicon samples implanted with hydro- gen (Si:H) or co-implanted with hydrogen and helium (Si:H, He) exhibit interesting properties at annealing in respect of the cleavage of the silicon top layer (the smart cut effect) and of the gettering activity of the implantation-disturbed ar- eas [1]. Most implanted atoms in the annealed samples are contained in the over-pressurized gas filled bubbles (with He in the atomic form while hydrogen is bonded to Si or/and is contained in the mentioned bubbles in the form of molecules, H 2 ) [2]. Enhanced hydrostatic pressure (HP) at annealing (HT–HP treatment) of H 2 + (H + )- or He + -implanted or co- implanted Czochralski silicon (Cz–Si, containing oxygen in- terstitials in a concentration ≤1.2 × 10 18 cm -3 ) results in the specific HP-induced effects, being dependent, among oth- ers, on the implantation energy (E) and dose (D) [3,4]. In particular, the HT–HP treatment of Cz–Si:H, He, with the H- ∗ Corresponding author. Tel.: +48 22 548 7792; fax: +48 22 847 0631. E-mail address: misiuk@ite.waw.pl (A. Misiuk). enriched layer placed shallower in respect to that He-enriched (i.e. for the case of E H 2 + = 135 keV and E He = 150 keV), re- sults in a creation of small cavities and bubbles, strongly suppressed accumulation of oxygen within the implantation- disturbed areas and in very specific dependence of hydro- gen out-diffusion on HP [4]. Further investigations confirmed strong effect of the HT–HP treatment on the microstructure of Cz–Si:H, He [5,6]; moreover, the HT–HP induced prop- erties of such samples are dependent on the sequence of the H- and He-enriched layers [5]. The HT–HP treatment effect on the microstructure of Cz–Si:H, He with practically superposed H- and He-enriched layers (the case not investigated as so far) and on reference Cz–Si:H prepared by implantation of hydrogen to the same (as in the case of Cz–Si:H, He) total dose is investigated in present work. 2. Experimental Cz–Si:H, He (in what follows these samples will be denoted as Si:H, He) was prepared by co-implantation 0925-8388/$ – see front matter © 2005 Elsevier B.V. All rights reserved. doi:10.1016/j.jallcom.2004.10.080