This is an electronic reprint of the original article. This reprint may differ from the original in pagination and typographic detail. Powered by TCPDF (www.tcpdf.org) This material is protected by copyright and other intellectual property rights, and duplication or sale of all or part of any of the repository collections is not permitted, except that material may be duplicated by you for your research use or educational purposes in electronic or print form. You must obtain permission for any other use. Electronic or print copies may not be offered, whether for sale or otherwise to anyone who is not an authorised user. Hassa, A.; Von Wenckstern, H.; Splith, D.; Sturm, C.; Kneiß, M.; Prozheeva, V.; Grundmann, M. Structural, optical, and electrical properties of orthorhombic -(In x Ga 1-x ) 2 O 3 thin films Published in: APL Materials DOI: 10.1063/1.5054394 Published: 01/02/2019 Document Version Publisher's PDF, also known as Version of record Please cite the original version: Hassa, A., Von Wenckstern, H., Splith, D., Sturm, C., Kneiß, M., Prozheeva, V., & Grundmann, M. (2019). Structural, optical, and electrical properties of orthorhombic -(In x Ga 1-x ) 2 O 3 thin films. APL Materials, 7(2), 1-9. [022525]. https://doi.org/10.1063/1.5054394