International Journal of Mass Spectrometry 354–355 (2013) 378–390
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International Journal of Mass Spectrometry
journal homepage: www.elsevier.com/locate/ijms
Fragmentation reactions of Si
2
Cl
6
+•
in the gas phase—A
quantum-chemical and mass-spectrometric assessment
Elie M.L. Fink
a
, Alexander Schießer
b
, Robert Berger
b,c,∗∗
, Max C. Holthausen
a,∗
a
Institute of Inorganic Chemistry, Goethe Universität, Max-von-Laue-Straße 7, 60438 Frankfurt am Main, Germany
b
Clemens-Schöpf Institute, Technische Universität Darmstadt, Petersenstraße 22, 64287 Darmstadt, Germany
c
Frankfurt Institute for Advanced Studies, Goethe University, Ruth-Moufang-Str. 1, 60438 Frankfurt am Main, Germany
article info
Article history:
Received 5 June 2013
Received in revised form 17 July 2013
Accepted 5 August 2013
Available online 19 August 2013
Keywords:
Hexachlorodisilane
Reaction pathways
Fragmentation channels
Ab initio calculations
Mass spectrometry
abstract
The gas-phase ion chemistry of the hexachlorodisilane radical cation Si
2
Cl
6
+•
has been reinvestigated
by a combined electron ionization (EI) mass spectrometry (MS) and high-level quantum chemistry
approach. The computational investigation of isomerization and fragmentation pathways of [Si
2
Cl
n
]
+( •)
(n = 1–6) species reveals (a) the coexistence of structures of the type Cl
3
Si–SiCl
m+1
+( •)
and chlorobridged
SiCl
4
–SiCl
m
+( •)
isomers for m = 1,2, and (b) a wealth of nearly isoenthalpic structures[Si
2
Cl
n
]
+( •)
for each
n with n = 2–4, which can result from degenerate rearrangements. This structural diversity appears to
be a general feature of the disilicon (radical) cations with low chlorine content. The ionization energy of
Si
2
Cl
6
determined by EI-MS (10.1 ± 0.2
stat
± 0.2
syst
eV) with argon (15.759 ± 0.001 eV) used as reference,
is slightly lower than previously reported experimental values, but in good agreement with the CBS-QB3
(9.87 eV) and W1U (9.97 eV) adiabatic ionization energy. Measured appearance energies for the lowest
two fragmentation channels, which afford SiCl
2
+•
and SiCl
3
+
, are well in line with CBS-QB3 values and
with the literature value determined for SiCl
3
+
in threshold photoelectron–photoion coincidence experi-
ments. Using the experimental heats of formation (
f
H
◦
298
) for SiCl
4
and Cl
·
as anchor points, W1U theory
was employed to derive
f
H
◦
298
values for Si
2
Cl
n
+( •)
with n = 0–6 and for SiCl
m
+( •)
with m = 1–4 based
on the lowest energy isomer identified in our quantum chemical investigation of reaction pathways for
all species investigated. W1U heats of formations obtained for select neutrals lead to a more consistent
description of kinetic aspects previously inferred from metastable ion mass spectra.
© 2013 Elsevier B.V. All rights reserved.
1. Introduction
The gas-phase chemistry of chlorinated silanes, their radicals
and ions, is of fundamental interest for silicon-based industries
where techniques, such as plasma-enhanced chemical-vapor depo-
sition [1–3] or chlorine-based surface etching of silicon [4–10]
are in customary use for the fabrication of semiconductor and
light-emitting devices, optical fibers, or photovoltaic solar cells, to
name a few. While SiCl
4
, a major side-product on a multi-kiloton
scale of state-of-the-art silicon production facilities [1], is used in
most of these processes, the higher perchlorosilanes have found
This work is dedicated to the memory of Detlef Schröder, a colleague and friend,
who has greatly impressed and inspired us by his scientific enthusiasm, sharp and
critical analyses and winking humor – demonstrated at its best in the marvelous
‘late-night ion show’ on phonomer research at Blankensee castle in 2003.
∗
Corresponding author. Tel.: +49 69 798 29430; fax: +49 69 798 29260.
∗∗
Corresponding author at: Clemens-Schöpf Institute, Technische Universität
Darmstadt Petersenstraße 22, 64287 Darmstadt, Germany.
E-mail addresses: Robert.Berger@tu-darmstadt.de (R. Berger),
Max.Holthausen@chemie.uni-frankfurt.de (M.C. Holthausen).
implementation only in very specific fields of application. Although
a jungle of patents, put forward in past decades, relating to the
technical use of hexachlorodisilane (Si
2
Cl
6
) indicates broad per-
spectives [11–20], comparatively little chemical insights can be
gained from the information disclosed. A substantial amount of
work has been invested in the characterization of silicon films
produced by chemical vapor deposition (CVD) of, e.g., Si
2
Cl
6
and
SiCl
4
. Yet, only a scarce body of recent literature on efforts to char-
acterize relevant precursors, reactive intermediates, or associated
deposition-mechanisms exists [21–31]. To the best of our knowl-
edge, the chemistry of perchloropolysilanes has not systematically
been evaluated in recent years, and no modern unifying view has
been framed, such that the interested chemist is left with little more
than old reports [32–33] and rather general text-book knowledge
[34].
Our own interest in this field has been spurred by an indus-
try cooperation with the CitySolar AG, Bad Kreuznach (Germany),
which successfully established a radio-frequency enhanced non-
thermal plasma process to produce perchlorinated polysilanes
Cl–(SiCl
2
)
x
–Cl on a multi-ton per year scale, using SiCl
4
and H
2
as
feedstock [35]. These polysilanes represent a quantitative source of
1387-3806/$ – see front matter © 2013 Elsevier B.V. All rights reserved.
http://dx.doi.org/10.1016/j.ijms.2013.08.002