Nano-Scale Strain-Induced Giant Pseudo-Magnetic Fields and Charging Effects in CVD-Grown Graphene on Copper N.-C. Yeh a , M. L. Teague a , R. T.-P. Wu a , S. Yeom b , B. L. Standley b , D. A. Boyd b , and M. W. Bockrath b,c a Department of Physics, California Institute of Technology, Pasadena, California 91125, USA b Department of Applied Physics, California Institute of Technology, Pasadena, California 91125, USA c Department of Physics, University of California, Riverside, California 92521, USA Scanning tunneling microscopic and spectroscopic (STM/STS) studies of graphene grown by chemical vapor deposition (CVD) on copper reveal that the monolayer carbon structures remaining on copper are strongly strained and rippled, with different regions exhibiting different lattice structures and local electronic density of states (LDOS). The large and non-uniform strain induces pseudo- magnetic field up to ∼ 50 Tesla, as manifested by the integer and fractional pseudo-magnetic field quantum Hall effects (IQHE and FQHE) in the LDOS of graphene. Additionally, ridges appear along the boundaries of different lattice structures, which exhibit excess charging effects. For graphene transferred from copper to SiO 2 substrates after the CVD growth, the average strain and the corresponding charging effects and pseudo-magnetic fields become much reduced. Based on these findings, we consider realistic designs of strain-engineered graphene nano-transistors, which appear promising for nano-electronic applications. The electronic properties of graphene exhibit significant dependence on the surrounding environment and high susceptibility to disorder because of the single layer of carbon atoms that behave like a soft membrane and because of the fundamental nature of Dirac fermions (1). In general, the sources of disorder in graphene may be divided into intrinsic and extrinsic disorder (1). Examples of intrinsic disorder include surface ripples and topological defects (1), whereas extrinsic disorder can come in many different forms, such as adatoms, vacancies, extended defects including edges and cracks, and charge in the substrate or on top of graphene (1). There are two primary effects associated with disorder on the electronic properties of graphene (1). The first effect is a local change in the single site energy that leads to an effective shift in the chemical potential for Dirac fermions (1). One example of this type of disorder stems from charge impurities. The second type of disorder effect arises from changes in the distance or angles between the p z orbitals (1). In this case, the hopping energies (and thus hopping amplitudes) between different lattice sites are modified, leading to the addition of a new term to the original Hamiltonian. The new term results in the appearance of vector (gauge) A and scalar potentials  in the Dirac Hamiltonian (1). The presence of a vector potential in the problem indicates that an effective magnetic field B S = (c/ev F )×A is also present, with opposite directions for the two inequivalent Dirac cones at K and K so that the global time-reversal symmetry is preserved. Here v F