International Journal of Nano Devices, Sensors and Systems (IJ-Nano) Volume 1, No. 2, November 2012, pp. 65-76 Journal homepage: http://iaesjournal.com/online/index.php/IJ-Nano ISSN: 2089-4848 Monte Carlo Simulation of Single Electronics Based on Orthodox Theory Ali A. Elabd, Abdel-Aziz T. Shalaby, El-Sayed M. El-Rabaie ARTICLE INFO ABSTRACT Article history: Received September 19, 2012 Revised October 09, 2012 Accepted October 29, 2012 In this paper, we present a detailed algorithm to compute the current-voltage characteristics of the single electron circuits by Monte Carlo method. Our simulator is designed to solve capacitance systems that contain tunnel junctions. The simulation process is based on orthodox theory. Single electron box, single electron transistor, electron pump and inverter circuits have been investigated, and the results are compared with the previous relevant literature. Keyword: Single electron devices, Monte Carlo simulation, Quantum tunneling, Orthodox theory, MUSES © 2012 – Insitute of Advanced Engineeering and Science. All rights reserved. Affiliation Faculty of Electronic Engineering, Minoufiya University, 32952 Menouf, Egypt. *Corresponding author, email address: ali_elabd@yahoo.com 1. INTRODUCTION The development of electronics to increase the processors speed and memories capacity needs to minimize the transistors size. Charge-based devices (e.g. MOSFETs), depending on the transfer of electric charges from the source to the drain (at least few thousands of elementary charges), are not the best choice for future electronics. Because downscaling increases the charge density so the flow of charges will dramatically rise the temperature of the device. This means ultralow power devices are needed to achieve our goal. If not, the exponential curve of Moore’s law will saturate after few years. Single electronics, controlling the transfer of one or few electrons along systems of small conducting particles "islands" separated by tunnel barriers, are promising candidates for high density integrated devices. The field of solid state single electronics began in 1985 when D. V. Averin and K. K. Likharev apply the orthodox theory [1] on the transfer of discrete charge through energy barriers along metallic conductors separated by ~1 nm of insulating material, which known as a "tunnel junction" [2]. They also predict the "single-electron tunneling (SET) oscillations" phenomenon [3], which represents the response of the device when a single electron tunnels through the insulator of the tunnel junction and deduce the relation of the oscillation frequency:     (1) where I is the dc current through the device and e is the elementary charge. In 1987, their theoretical work was supported by T. A. Fulton and G. J. Dolan experiments [4] when the first single electron transistor was implemented.