Nanomaterials 2021, 11, 2595. https://doi.org/10.3390/nano11102595 www.mdpi.com/journal/nanomaterials
Article
Topological Anderson Insulator in Cation‐Disordered
Cu2ZnSnS4
Binayak Mukherjee
1,
*, Eleonora Isotta
1
, Carlo Fanciulli
2
, Narges Ataollahi
1
and Paolo Scardi
1,
*
1
Department of Civil, Environmental and Mechanical Engineering, University of Trento, via Mesiano 77,
38123 Trento, Italy; eleonora.isotta@unitn.it (E.I.); narges.ataollahi@unitn.it (N.A.)
2
Lecco Unit, National Research Council of Italy, Institute of Condensed Matter Chemistry and Technologies
for Energy (CNR‐ICMATE), via Previati 1/E, 23900 Lecco, Italy; carlo.fanciulli@cnr.it
* Correspondence: binayak.mukherjee@unitn.it (B.M.); paolo.scardi@unitn.it (P.S.)
Abstract: We present the first candidate for the realization of a disorder‐induced Topological An‐
derson Insulator in a real material system. High‐energy reactive mechanical alloying produces a
polymorph of Cu2ZnSnS4 with high cation disorder. Density functional theory calculations show an
inverted ordering of bands at the Brillouin zone center for this polymorph, which is in contrast to
its ordered phase. Adiabatic continuity arguments establish that this disordered Cu2ZnSnS4 can be
connected to the closely related Cu2ZnSnSe4, which was previously predicted to be a 3D topological
insulator, while band structure calculations with a slab geometry reveal the presence of robust sur‐
face states. This evidence makes a strong case in favor of a novel topological phase. As such, the
study opens up a window to understanding and potentially exploiting topological behavior in a
rich class of easily‐synthesized multinary, disordered compounds.
Keywords: quaternary chalcogenides; topological insulators; disordered systems; kesterite;
thermoelectrics
1. Introduction
Topologically non‐trivial materials present a novel and exciting field of research in
condensed matter [1]. They are valued both for their importance to fundamental science
as exotic states of quantum matter as well as their inherent potential for application in
new and future technologies including thermoelectrics [2–4], spintronics [5–7], and quan‐
tum computation [5,6,8]. Starting with the discovery of the Quantum Hall Effect (QHE)
by von Klitzing et al. [9], this class of materials has grown to include many candidates in
2‐,3‐, and higher dimensional systems, a growing (albeit still small) fraction of which have
been experimentally realized. Three‐dimensional (3D) topological insulators (TIs) present
a sub‐class of these exotic materials. They may generally be described as hosting insulat‐
ing bands in the bulk with band inversion at high‐symmetry points, coupled with sym‐
metry‐protected gapless surface states [10]. In the absence of symmetry breaking, these
surface states support high‐mobility electron transport along specific directions on the
surface, without backscattering. Large spin‐orbit coupling (SOC) was originally under‐
stood to be driving the topologically non‐trivial behavior [11–15]. Subsequently, Fu [16]
demonstrated that topological surface states can also be protected by crystalline symme‐
tries in the absence of SOC (topological crystalline insulators). This allows for topologi‐
cally non‐trivial materials with a weak SOC [17].
The possibility of TIs in the quaternary chalcogenide class has been investigated by
Chen et al. [18], using density functional theory (DFT) band structures. They showed that
HgTe, a 3D semimetal with the zinc‐blende structure, may be transformed into a TI by
introducing a strong crystal field splitting (ΔCF). This can be achieved either by epitaxial
straining or by substituting two group‐II Hg ions with one group‐I ion and one group‐III
Citation: Mukherjee, B.; Isotta, E.;
Fanciulli, C.; Ataollahi, N.; Scardi, P.
Topological Anderson Insulator in
Cation‐Disordered Cu2ZnSnS4.
Nanomaterials 2021, 11, 2595.
https://doi.org/10.3390/nano11102595
Academic Editor: Jory Yarmoff
Received: 30 July 2021
Accepted: 29 September 2021
Published: 1 October 2021
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