Memory Maps: Reading RRAM Devices Without Power Consumption S. Dueñas a , H. Castán a , K. Kukli b,c , M. Mikkor b , K. Kalam b , T. Arroval b , and A. Tamm b a Department of Electronics, University of Valladolid, Valladolid, Spain b Institute of Physics, University of Tartu, Tartu, Estonia c Department of Chemistry, University of Helsinki, Helsinki, Finland correspondent author email: sduenas@ele.uva.es A comparative study of MIM-RRAM structures with different insulator materials is presented. Admittance memory mapping was carried out at 0 V dc bias, revealing two clearly separated states, both in terms of conductance and susceptance. The memory in the ON state can be modeled by means of a two parameter (resistance and inductance) equivalent circuit. The parameter extraction provides memory maps for the resistance and the inductance as well. The transition shapes between the ON an OFF state are different for each structure due to specific physical mechanisms. Introduction According to the 2014 International Technology Roadmap for Semiconductors (ITRS), resistive switching memories (RRAM) are good candidates for the next generation nonvolatile memories. Their main properties are fast switching speed, good reliability, low power consumption and CMOS technology compatibility [1, 2], as well as potential scalability beyond NAND flash [3, 4]. They are based on the change in the physical properties of a conductive filament by applying an electric field across a metal-insulator- metal (MIM) or metal-insulator-semiconductor (MIS) structure. A set switching forms and closes the filament, and induces a transition from the high-resistance state (HRS) to the low-resistance state (LRS). A reset switching disrupts the filament and induces the opposite transition. The resistance switching is generally caused by the diffusion of oxygen vacancies, charge carrier trapping and detrapping, and Schottky barrier modulation to produce the memory effect [5]. The implementation of RRAM memory devices in the industry requires a detailed understanding of switching mechanisms, hence significant improvement in the knowledge limits is still needed. To expand the conventional characterization techniques spectrum of RRAM devices, we propose to study the small- signal parameters, namely, conductance (G) and susceptance (B) [6, 7]. Both G and B memory maps provide complementary information about the physical nature of the switching mechanisms. Moreover, reading of the memory state is carried out without dc power consumption. Here we present comparative results of MIM-RRAM with different insulator materials. Stacks or doped dielectrics are used in order to increase the defect densities and enhance the resistive switching phenomena.