Supporting Information High efficiency InAs/GaAs quantum dot solar cell due to inter-dot n-doping K. A. Sablon and J. W. Little U.S.Army Research Laboratory, Adelphi, MD 20783 V. Mitin, A. Sergeev, N. Vagidov University at Buffalo, Buffalo, NY 14260 K. Reinhardt Air Force Office for Scientific Research (i) Photoluminescence of n- and p-doped QD structures. The room temperature photoluminescence (PL) in QDoSCs has been measured under the short circuit conditions to match to the short circuit current measurements. To stimulate the PL we used the 532 nm line from a frequency-doubled neodymium doped yttrium aluminum garnet (Nd:YAG) laser with the 20 μm diameter of the laser spot on a sample. The PL signals from the samples were measured by an InGaAs detector array. The PL spectra were obtained under excitation intensities of 0.3, 0.5, 1, and 4 W/cm 2 . PL data for low intensities are presented in the main text. Figure 1 shows the spectral dependence of the PL on the doping level in n-doped samples under intensity of 0.5 W/cm 2 .