Myung Gwan Hahm Department of Mechanical and Industrial Engineering, NSF Nanoscale Science and Engineering Center for High-Rate Nanomanufacturing, Northeastern University, Boston, MA 02115 e-mail: mghahm@coe.neu.edu Young-Kyun Kwon e-mail: ykkwon@khu.ac.kr Department of Physics and Research Institute for Basic Sciences, Kyung Hee University, Seoul 130-701, Korea Ahmed Busnaina Yung Joon Jung 1 e-mail: jungy@coe.neu.edu Department of Mechanical and Industrial Engineering, NSF Nanoscale Science and Engineering Center for High-Rate Nanomanufacturing, Northeastern University, Boston, MA 02115 Structure Controlled Synthesis of Vertically Aligned Carbon Nanotubes Using Thermal Chemical Vapor Deposition Process Due to their unique one-dimensional nanostructure along with excellent mechanical, electrical, and optical properties, carbon nanotubes (CNTs) become a promising material for diverse nanotechnology applications. However, large-scale and structure controlled synthesis of CNTs still have many difficulties due to the lack of understanding of the fundamental growth mechanism of CNTs, as well as the difficulty of controlling atomic- scale physical and chemical reactions during the nanotube growth process. Especially, controlling the number of graphene wall, diameter, and chirality of CNTs are the most important issues that need to be solved to harness the full potential of CNTs. Here we report the large-scale selective synthesis of vertically aligned single walled carbon nano- tubes (SWNTs) and double walled carbon nanotubes (DWNTs) by controlling the size of catalyst nanoparticles in the highly effective oxygen assisted thermal chemical vapor deposition (CVD) process. We also demonstrate a simple but powerful strategy for syn- thesizing ultrahigh density and diameter selected vertically aligned SWNTs through the precise control of carbon flow during a thermal CVD process. DOI: 10.1115/1.4002443 1 Introduction Nanotechnologies based on carbon nanotubes CNTsare de- veloped very rapidly from the discovery in 1993 1because of their exceptional mechanical, electrical, and optical properties 2. The applications of CNTs are their use in nanoscale electronics such as nanosensors, interconnects, and field effect transistors by their specific electronic structures, superior transport properties, and unique one-dimensional nanostructures 3–5. In the synthesis of CNTs, the catalytic chemical vapor deposition CVDmethod has been developed actively for the large-scale synthesis of CNTs 6–12. However, still challenging difficulties are the control of morphology and structure of CNTs with the ability of synthesizing them in a large quantity. The key parameters in CNT growth using thermal CVD processes are chemical and physical characteristics of catalyst nanoparticles, hydrocarbons, and reaction environment during growth of CNTs. In the CVD process, the dissociation of hydrocarbon molecules catalyzed by the transition metal and the precipitation of sp 2 carbon bonds from supersaturated metal cata- lyst nanoparticles lead to the formation of CNTs. Therefore, the diameter of CNTs is closely related to the size of metal catalyst nanoparticles. However, it is very difficult to control the size of catalyst nanoparticles precisely with the uniform distribution. In this paper, we report the large-scale selective growth of vertically aligned VASWNTs and DWNTs using an ethanol based thermal CVD process. We also demonstrate the large-scale synthesis of diameter controlled vertically aligned SWNTs by controlling the flow rate of ethanol vapor. To understand the diameter selected growth of SWNTs, we also carried out a computational investiga- tion of the fundamental SWNT growth mechanism and kinetics under different ethanol flow rates in the CVD process using vari- ous computational techniques, including the first-principles for- malism. 2 Experimental Method Vertically aligned CNTs were synthesized by employing a ther- mal ethanol CVD technique 13. Figure 1 is a schematic showing our ethanol CVD system and experimental procedure for the growth of high density and vertically aligned CNTs. First, a 20 nm thick Al film was deposited onto a SiO 2 layer using a sputter coater and exposed to the air for the formation of aluminum-oxide buffer layer to grow highly dense and vertically aligned CNTs Fig. 1b. Then, an ultrathin Co catalyst film with 0.5–1 nm thickness was deposited on an Al 2 O x / SiO 2 multilayer using an e-beam evaporator Fig. 1c. The prepared substrate Co / Al 2 O x / SiO 2 was placed inside of a quartz tube and the CVD chamber was evacuated to 15 mTorr. Then the temperature was increased to 850° C while being exposed to an argon-hydrogen mixture gas 5% hydrogen balanced Arwith 100 SCCM SCCM denotes cubic centimeter per minute at STPflow rate. In a de- sired reaction temperature 850°C, controlled high purity anhy- drous ethanol 99.95%was supplied as a carbon source for the high density nucleation and growth of CNTs resulting in vertically aligned CNT arrays Fig. 1d. For the characterization of the CNT structure and morphology, transmission electron microscope TEM, Raman spectroscopy, and scanning electron microscopy SEMwere used. Especially, to investigate the large-scale diam- eter distribution of synthesized vertically aligned SWNTs, a Ra- man radial breathing mode RBMmapping process was em- ployed with an excitation wavelength at 785 nm. Raman RBM maps were recorded using a Raman microscope LabRAM HR 800, HORIBA Jobin Yvonand a mechanical-optical mapping stage. 3 Results and Discussion Figure 2ashows a cross-sectional optical image of CNT film grown using an ethanol CVD process. During the CVD reaction, controlled amounts of oxygen in ethanol molecules C 2 H 5 OH work as a weak oxidizer that would selectively remove amor- 1 Corresponding author. Manuscript received June 15, 2009; final manuscript received January 13, 2010; published online November 15, 2010. Assoc. Editor Wilson K. S. Chiu. Journal of Heat Transfer MARCH 2011, Vol. 133 / 031001-1 Copyright © 2011 by ASME Downloaded 15 Nov 2010 to 168.7.242.64. Redistribution subject to ASME license or copyright; see http://www.asme.org/terms/Terms_Use.cfm