5435 ZnS/Cu 2 ZnSnS 4 /CdTe/In Thin Film Structure for Solar Cells M.A. Jafarov, E.F. Nasirov, S.A.Jahangirova, Baku State University, Baku, Azerbaijan maarif.jafarov@mail.ru Abstract A solar cell with glass/ITO/ZnS/Cu 2 ZnSnS 4 /CdTe/In structure has been fabricated using all-electrodeposited ZnS, Cu 2 ZnSnS 4 and CdTe thin films. The three semiconductor layers were electrodeposited using a two- electrode system for process simplification. The incorporation of a wide bandgap amorphous ZnS as a buffer/window layer to form ITO/ZnS/Cu 2 ZnSnS 4 /CdTe/In solar cell resulted in the formation of this 3-layer device structure. This has yielded corresponding improvement in all the solar cell parameters resulting in a conversion efficiency >12% under AM1.5 illumination conditions at room temperature. These results demonstrate the advantages of the multi-layer device architecture over the conventional 2-layer structure. Keywords: solar cell, ZnS, Cu 2 ZnSnS 4 , CdTe, thin film, electrodeposition Language: English Date of Publication: 31-05-2018 DOI: 10.24297/jap.v14i2.7395 ISSN: 2347-3487 Volume: 14 Issue: 2 Journal: Journal of Advances in Physics Website: https://cirworld.com This work is licensed under a Creative Commons Attribution 4.0 International License.