Int J Thermophys (2010) 31:1011–1019 DOI 10.1007/s10765-010-0753-5 Photo-carrier and Electronic Studies of Silicon-Doped GaAs Grown by MBE Using PCR J. A. Villada · S. Jiménez-Sandoval · M. López-López · J. Mendoza · D. G. Espinosa-Arbeláez · M. E. Rodríguez-García Received: 28 June 2009 / Accepted: 10 May 2010 / Published online: 30 May 2010 © Springer Science+Business Media, LLC 2010 Abstract Photo-carrier radiometry (PCR) has been used to study the distribution of impurities and the lattice damage in silicon-doped gallium arsenide in a noncontact way. The results from the PCR study are correlated with Hall effect measurements. Samples for this study were grown by molecular beam epitaxy. Of all possible param- eters that can be manipulated, the silicon effusion cell temperature was the only one that was varied, in order to obtain samples with different silicon concentrations. The distribution of impurities was obtained by scanning the surface of each sample. The PCR amplitude and phase images were obtained as a function of the x – y position. According to the PCR images, it is evident that the impurities are not uniformly dis- tributed across the sample. From these images, the average value of the amplitude and phase data across the surface was obtained for each sample in order to study the PCR signal behavior as a function of the silicon effusion cell temperature. Keywords Electrical properties · Photo-carrier radiometry · Si-doped GaAs · Thermoelectronic images J. A. Villada · S. Jiménez-Sandoval Centro de Investigación y de Estudios Avanzados del IPN, Unidad Querétaro, Apdo. Postal 1-798, CP 76001 Querétaro, Qro, México M. López-López · J. Mendoza Departamento de Física, Centro de Investigación y de Estudios Avanzados del IPN, Avenida IPN, 2508 México, DF, México D. G. Espinosa-Arbeláez · M. E. Rodríguez-García (B ) Departamento de Nanotecnología, Centro de Física Aplicada y Tecnología Avanzada, UNAM Campus, Juriquilla, Querétaro, Qro, México e-mail: mariorodga@gmail.com 123