Contents lists available at ScienceDirect Journal of Alloys and Compounds journal homepage: www.elsevier.com/locate/jalcom Anisotropic magnetoresistance in room temperature ferromagnetic single crystal CrTe fake Shasha Sun a , Jian Liang a , Ruobai Liu b , Wei Shen a , Haijing Wu a , Mingming Tian a , Lulu Cao a , Yutian Yang a , Zhaocong Huang a, ⁎ , Weiwei Lin a , Jun Du b , Zhenhua Ni a , Yongbing Xu c , Qian Chen a , Ya Zhai a, ⁎ a School of Physics and Quantum Information Research Center, Southeast University, Nanjing 211189, China b National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China c Laboratory of Spintronics and Nanodevice, Department of Electronic Engineering, York University, York YO10 3LT, UK article info Article history: Received 12 June 2021 Received in revised form 15 August 2021 Accepted 30 August 2021 Available online 1 September 2021 Keywords: Chromium tellurides Chemical vapor deposition Room temperature ferromagnet Anisotropic magnetoresistance Perpendicular magnetic anisotropy abstract Chromium tellurides have triggered tremendous investigations in physics and materials science, where their unique properties offer excellent opportunities for spintronic applications. Here, we report anisotropic magnetoresistance (AMR) of ferromagnetic CrTe single crystal fake grown by chemical vapor deposition. An individual hexagonal fake exhibits an easy magnetization axis along its normal direction, and cooling from room temperature to low temperature, its electrical resistance measured with the magnetization parallel to current geometry is larger than that for the perpendicular to the current geometry, indicating the presence of an AMR behavior. The AMR ratio has been found to increase with decreasing temperature and is 5.2% at 5 K, comparable with general magnetic transition metal and alloy. This suggests CrTe single crystal fake to be a promising magnetic material for spintronics applications. © 2021 Elsevier B.V. All rights reserved. 1. Introduction Anisotropic magnetoresistance (AMR) is an intrinsic phenom- enon in magnetic materials, as a result of the relation between electrical transport and magnetization orientation [1–3]. This phe- nomenon has been well established for 3d transition metals such as Fe, Co, and Ni and their alloys [3]. From AMR measurements, we can obtain not only the relation of resistivity under the different mag- netic feld orientations, but also the information about basic mag- netic properties in the material. It is appropriate especially to reveal the intrinsic magnetism in single crystal fakes with smaller lateral area down to several tens micron size. Chromium tellurides (Cr-Te) have attracted much interests due to their excellent intrinsic ferro- magnetism with high Curie temperature [4,5], and the potential applications in the spintronics devices since the discovery of in- trinsic ferromagnetic 2D material in 2017 and subsequent develop- ment [6–10]. The chromium tellurides family possesses various phases with different atomic compositions [11], such as CrTe 2 [12,13], CrTe 3 [14,15], and Cr 5 Te 8 [16], etc. The structure for layered van der Waals (vdW) crystals is only CrTe 2 . It consists of Te-Cr-Te triple layers, which are stacked along the hexagonal c-axis. Adjacent triple layers are bonded by weak vdW forces. For other composition, some extra Cr atoms are located between the triple layers. Their conductivity could be turned from semiconducting to metallic by decreasing the content of Te. And the magnetic ordering tempera- ture T c could be increased by increasing the content of Cr [4,5,17–19]. The bulk Cr-Te could be synthesized easily by chemical vapor transport (CVT) [4], and the bulk magnetic properties have also ex- tensively studied, except CrTe. For the 1T-CrTe, however, few works have been reported in ex- periment because it is difcult to fabricate. The structures are re- ported including zinc-blende (ZB), wurtzite (WZ) and NiAs (NA) types. It has been seen that two works focus on epitaxy flms with ZB and NA type structures by MBE respectively [20,21], which fnd that the T c decreases with decreasing the thickness of flms. More re- cently, there is a work focusing on NA-type CrTe fakes grown suc- cessfully by chemical vapor deposition (CVD), which exhibit a strong easy-normal ferromagnetism, and a decrease of T c from 205 K to 140 K with decreasing thickness measured by magneto-optic Kerr effect (MOKE) [22]. However, the magnetism, electronic transport, especially magnetoresistance in the CrTe fake still keep many mysteries and require further studied, while more results has not been reported so far. CVD growth method has many advantages for https://doi.org/10.1016/j.jallcom.2021.161818 0925-8388/© 2021 Elsevier B.V. All rights reserved. ]] ]] ]]]]]] ⁎ Corresponding authors. E-mail addresses: hzc28@seu.edu.cn (Z. Huang), yazhai@seu.edu.cn (Y. Zhai). Journal of Alloys and Compounds 890 (2021) 161818