close to 60 GHz for different MOM designed in a CMOS 45- nm process. The extracted lumped elements of the designed MOM capacitor are presented in Table 1. It is shown that the quality factor increase with the capacity density. 6. CONCLUSIONS An innovative structure of 3D MOM capacitor designed in a standard CMOS 45-nm STMicroelectronics process was pre- sented. These MOM capacitors dedicated to mmw applications present high capacitance density from 1 to 3.2 fF/lm 2 and losses lower than 1 dB at 60 GHz. Moreover, the presented MOM capacitors have higher Q (from 3 to 10) than MIM, and lower losses than 3D trench capacitors due to the very low-coupling effect with the substrate, in an advanced CMOS process. ACKNOWLEDGMENTS The authors thank N. Corrao, IMEP-LAHC, Grenoble, France, for the measurements. REFERENCES 1. S. Queennie, et al., Performance comparison of MIM capacitors and metal finger capacitors for analog and RF applications, In: IEEE RF and Microwave Conference, Subang, Malaysia, October, 2004, pp. 85–89. 2. C. Zhen,et al., A study of MIM on-chip capacitor using Cu/SiO 2 interconnect technology, IEEE Microwave Wireless Compon Lett 12 (2002), 246–248. 3. K. Bu ¨yu ¨ktas, et al., Simulation and modelling of a high perform- ance trench capacitor for RF applications, Semicond Sci Technol 24 (2009). 4. K. Subramaniaml, et al., Design and modeling of metal finger capacitors for RF applications, In: IEEE Asia-Pacific Conference on Applied Electromagnetics, Johor Bahru, Malaysia, December, 2005, pp. 293–296. 5. J.N. Burghartz,et al., Microwave inductors and capacitors in stand- ard multilevel interconnect silicon technology, IEEE Trans Micro- wave Theory Tech 44 (1996), 100–104. 6. E.P. Vandamme,et al., Improved three-step de- embedding method to accurately account for the influence of pad parasitics in silicon on-wafer RF test-structures, IEEE Trans Electron Dev 48 (2001), 737–742. V C 2011 Wiley Periodicals, Inc. AN F-SHAPED PRINTED MONOPOLE ANTENNA FOR DUAL-BAND RFID AND WLAN APPLICATIONS Jyoti Ranjan Panda and Rakhesh Singh Kshetrimayum Department of Electronics and Communication Engineering, Indian Institute of Technology, Guwahati 781039, India; Corresponding author: krs@iitg.ernet.in Received 30 September 2010 ABSTRACT: A simple microstrip fed printed monopole antenna for the radio frequency identification (RFID) and wireless local area network (WLAN) is presented. The antenna has two different resonant current paths (forming an F-shaped structure) that support two resonances at 2.44 and 5.18 GHz, which are reserved for RFID and WLAN applications, respectively. Effectively omnidirectional radiation pattern and large impedance bandwidth has been observed both from simulation and experimental results. Impedance bandwidth for center frequency of 2.44 and 5.18 GHz are 0.65 GHz (2.12–2.77 GHz) and 0.59 GHz (4.91–5.50 GHz), respectively. The proposed antenna is simple in design and compact in size; providing broadband impedance matching, consistent omnidirectional radiation patterns and appropriate gain characteristics (>1.5dBi) in the RFID and WLAN frequency regions. V C 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett 53:1478–1481, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26060 Key words: F-shaped printed monopole antenna; RFID; WLAN 1. INTRODUCTION In recent years, the radio frequency identification (RFID) has received wide spread attention for application in many services such as tracking objects, identifying objects in the manufactur- ing, and supply chain management systems as well as material flow systems [1]. An RFID system basically comprise of a read/ Figure 7 Measured quality factor of the 215 fF MOM capacitors TABLE 1 Extracted Lumped Elements of MOM Capacitors With the Metal Stack Dens. (fF/lm 2 ) þ Metals Levels C 0 (pF) C 1 (fF) R 0 (X) L 0 (pH) f res. (GHz) Q @ 60 GHz 1 M5/M7 0.129 1.97 0.4 3 160 3.2 1.1 M5/M7 0.215 3.5 0.3 5 110 6.7 3.1 M5/M6 0.629 37 0.45 1 80 9.5 3.2 M1/M6 1.15 44 0.7 1.5 70 10.2 3.1 M1/M6 5.6 195 1 7.4 25 Figure 1 Geometry of the proposed antenna 1478 MICROWAVE AND OPTICAL TECHNOLOGY LETTERS / Vol. 53, No. 7, July 2011 DOI 10.1002/mop