PERGAMON Microelectronics Reliability38 (1998) 931-936 MICROELECTRONICS RELIABILITY Hot carrier degradation mechanisms in sub-micron p channel MOSFETs: Impact on low frequency (l/f) noise behaviour E. Sheehan, P.K. Hurley and A. Mathewson National Microelectronics Research Centre, University College Cork, Lee Maltings, Prospect Row, Cork, Ireland. Abstract In this work we present new results which illustrate the impact of hot carrier (HC) degradation on the low frequency (I/f) noise behaviour of submicron p channel MOSFETs. Submicron p channel MOSFETs were subjected to HC stress at a range of gate bias conditions, and the response of the low frequency noise was recorded. The results obtained are in marked contrast to the reported influence of HC stress on nMOSFETs 1/f noise, and indicate that the measurement of 1/f noise is a useful tool for investigating HC induced aging effects in submicron p channel devices. The significance of these results to the use of pMOSFETs in analog applications is briefly discussed. © 1998 ElsevierScienceLtd. All rights reserved. I. Introduction Several previous studies have reported that hot carrier (HC) degradation [1-4] and plasma charging damage [5] have a significant impact on the low frequency (l/f) noise behaviour of n channel MOSFETs. The increase in the 1/f noise levels has been attributed to a generation of slow states in the gate oxide during the high field stress. Analysis has identified the generated slow states to be located in a narrow region (<50 nm) surrounding the drain of the device [1,2]. Furthermore, the sensitivity of 1/f noise to the Si-SiO2 interface properties has resulted in the use of 1/f noise measurements as a monitor for HC induced oxide degradation in n channel devices. 0026-2714/98/$ - see front matter. © 1998 ElsevierScienceLtd. All rights reserved. PII: S0026-2714(98)00143-7