Journal of Electrical Engineering 3 (2015) 53-59 doi: 10.17265/2328-2223/2015.02.001 Electrical Properties and Crystal Perfection of the n-Type Si-rich SiGe Alloys Bulk Single-Crystals Elza Khutsishvili 1, 2 , Nunu Khutsishvili 3 , Bela Kvirkvelia 1, 2 , George Kekelidze 4 , Lali Nadiradze 3 and Nodar Kekelidze 1, 2, 3 1. Laboratory of Semiconductor Materials, Ferdinand Tavadze Institute of Metallurgy and Materials Science, Tbilisi 0160, Georgia 2. Institute of Materials Research, Iv. Javakhishvili Tbilisi State University, Tbilisi 0179, Georgia 3. Department of Physics, Georgian Technical University, Tbilisi 0175, Georgia 4. BoT Eurosolar, Kaiser-Friedrich Strasse, Bonn 53113, Germany Abstract: Electrical properties and crystal perfection of undoped and n-type heavily arsenic-doped the Si-rich SiGe alloys bulk single-crystals were investigated. Influence of Ge atoms and doping by As on electrical properties and crystal perfection of SiGe alloys in the composition range 0-3at%Ge are reported. It was established, that carriers mobility in heavily impurity doped n-type Si-rich SiGe alloys is significantly lower, than in undoped alloys. It does not depend on the Ge concentration and is defined by carriers scattering upon impurity ions. It was established, that Ge atoms do not scatter as neutral centers. The mobility, related to the carriers scattering upon Ge atoms, can be explained in terms of “alloy” scattering. Investigation has shown that increasing of Ge content in Si increases dislocations density and disturbs their homogeneous distribution. The disturbance of homogeneous distribution of dislocations increases with increasing of Ge concentration. But dislocation structure is not revealed in heavily doped n-SiGe alloy crystals. Thus dilute heavily impurity-doped with arsenic SiGe alloys are similar to impurity-doped n-Si. Key words: Electrical properties, crystal perfection, SiGe alloys, impurity. 1. Introduction 1 Taking into consideration different semiconductor technologies the modern conception is that Si technology is the most developed and Si is the prevalent material for semiconductor devices. But Si technology does not provide increased market’s demands. SiGe technology may overcome many limitations, peculiar to Si technology in the properties of devices for new applications. SiGe alloys are ordinarily found in today’s semiconductor devices technologies because of their governing band gap, variable electrical and other properties. So SiGe technology may outperform the Si technology. The SiGe alloys are one of the most advanced Corresponding author: Nodar Kekelidze, doctor, research fields: semiconductor physics, material science and engineering. materials of the present century for high-frequency, analog, digital and other microelectronic and photonic devices. For these applications SiGe alloys are generally obtained as thin films grown on crystalline substrates. There observed strains and dislocations in these structures, which are major barriers to the investigation of intrinsic properties of SiGe alloys and their applications. For successful promotion of SiGe alloys to market and to reveal the intrinsic properties of SiGe alloys it is necessary to study properties of their single crystals in bulk form. From the viewpoint of fundamental research SiGe alloys are a nearly ideal system of alloys to study its properties for achieving the impressive progress in the development of new devices principles. For numerous applications of SiGe alloys among their properties, defining the operating parameters of devices, with other basic factors, the electrical ones D DAVID PUBLISHING