Journal of Crystal Growth 223 (2001) 341–348 MBE growth of InAs/InAsSb/AlAsSb structures for mid-infrared lasers A. Wilk a , F. Genty a , B. Fraisse b , G. Boissier a , P. Grech a , M. El Gazouli a , P. Christol c , J. Oswald d , T. Simecek d , E. Hulicius d , A. Joullie´ a, * a Centre d ’E ´ lectronique et de Micro-optoe ´lectronique de Montpellier (CEM2), Unite ´ Mixte de Recherche CNRS n85507, Universite ´ de Montpellier II, Sciences et Techniques du Languedoc, case 067, 34095 Montpellier Cedex 05, France b Laboratoire des Agre ´gats Mole ´culaires et Mate ´riaux Inorganiques (LAMMI), Universite ´ de Montpellier II, Sciences et Techniques du Languedoc, case 412, 34095 Montpellier Cedex 05, France c Laboratoire de Physique des Mate ´riaux (LPM), faculte ´ des Sciences d ’Avignon, 33 rue Pasteur, F. 84000 Avignon, France d Institute of Physics, Academy of Sciences, Cukrovarnicka 10, 162 53 Prague, Czech Republic Received 7 July 2000; accepted 20 December 2000 Communicated by K.H. Ploog Abstract The growth by solid source molecular beam epitaxy (MBE) of type-II InAsSb/InAs multi-quantum well laser diodes on InAs has been studied. Strained InAsSb/InAs quantum wells were sandwiched between two AlAs 0.16 Sb 0.84 2 mm- thick cladding layers, lattice-matched to InAs. The precise control of the composition of the thick AlAsSb ternary alloy was obtained using a quasi-stoichiometric growth (QSG) method, which requires a determination of the incorporation rate of each element. This rate was obtained from reflection high-energy electron diffraction (RHEED) intensity oscillations. Alloys composition was entirely controlled by Sb 2 flux, suggesting a sticking coefficient close to unity. Mesa-stripe laser diodes processed from the epitaxied structures operated at 3.5 mm in pulsed regime up to 220K, with a threshold current density of 130A/cm 2 at 90K and a peak optical power efficiency of 50mW/A/facet. # 2001 Elsevier Science B.V. All rights reserved. PACS: 42.55.Px; 68.55.Bd; 78.55.Cr; 85.30.z Keywords: A3. Molecular beam epitaxy; B1. Antimonides; B2. Semiconducting III–V materials; B3. Infrared devices; B3. Laser diodes 1. Introduction Semiconductor laser diodes emitting in the 2– 5 mm mid-infrared (MIR) wavelength range are being extensively developed because of the wide range of applications they allow. Different do- mains such as high-resolution gas spectroscopy, free-space optical communications, military coun- ter-measure systems or highly precise surgery require compact and reliable infrared laser sources with low power consumption. In particular, the MIR wavelength range contains strong absorption *Corresponding author. Tel.: +33-46752-4368; fax: +33- 46754-4842. E-mail address: joullie@univ-montp2.fr (A. Joullie´). 0022-0248/01/$-see front matter # 2001 Elsevier Science B.V. All rights reserved. PII:S0022-0248(01)00600-5