Optical and Microstructure behavior on Vanadium doped (V-TiO 2 ) oxide films using magnetron reactive sputtering B. Samarpranarao #1 , M. V. Lakshmaiah #1 , T. Lakshmi Narasappa #2 , Y. M. K. Reddy #3 #1Department of Physics, S.K. University, Ananthapuramu-515003, (A P), India 6301336179; 9441588189; samarpanabandaru@gmail.com; drmvl2009@gmail.com. #2 Department of Electronics, S.V. Degree College, Ananthapuramu-515001 (A P) 9030267805; lakshmirathan9@gmail.com. #3 Department of Physics, SSBN Degree College (Autonomous), Ananthapuramu-515001 9440243514; ymkreddy60@gmail.com. ABSTRACT Vanadium doped Titanium dioxide (V-TiO2) thin films were prepared using DC magnetron sputtering method. The samples were subjected to analysis of X-ray diffraction, SEM and optical studies. The XRD films revealed the crystallographic lattice planes such as (101), (200) etc. We report two observations, one was variation of partial O2 pressure inside the chamber and other was temperature dependent. The broad peaks were assigned to 2θ=25.313º for (101) plane, 2θ=37.684º for (112) plane and 2θ=48.084º for (200) plane and intensity of interfacial planer planes was magnified with the temperature. SEM Micrographs show that tracks of annealed metal TiO2 films were developed significantly and film phases were distributed uniformly with the temperature variation. EDAX reviled that the mean ratio of Ti:V was 52.35:47.65 and an evaluated Ti/V ratio was 1.10. The average size of the crystallite was also determined using Scherer formula and the structural parameters were determined on the basis of temperature dependent and the present work indicates the percent of transmission for electronic applications. Key words: DC Magnetron sputter, TiO2 thin films, XRD, SEM, Electrical parameters. Pramana Research Journal Volume 10, Issue 7, 2020 ISSN NO: 2249-2976 https://pramanaresearch.org/ 23