VOLUME 87, NUMBER 20 PHYSICAL REVIEW LETTERS 12 NOVEMBER 2001
Entropy-Driven Stabilization of a Novel Configuration
for Acceptor-Hydrogen Complexes in GaN
Sukit Limpijumnong,* John E. Northrup, and Chris G. Van de Walle
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, California 94304
(Received 13 July 2001; published 29 October 2001)
We present a model for the microscopic structure of Mg-H complexes in GaN, explaining the unusual
bond angle observed in recent vibrational spectroscopy studies. The structure is not the lowest-energy
configuration at T 0, but it is stabilized at elevated temperatures due to the large entropy associated
with a set of low-energy rotational excitations. The rotational excitation spectrum is calculated using a
quantum-mechanical model in which the hydrogen atom moves in a weak corrugation potential. Conse-
quences for experiment are discussed.
DOI: 10.1103/PhysRevLett.87.205505 PACS numbers: 61.72.Bb, 61.72.Vv, 63.20.Pw
It is well known that hydrogen can passivate dopants in
semiconductors, resulting in the formation of electrically
inactive dopant-hydrogen complexes [1]. This process
plays a critical role during the growth of acceptor-doped
GaN, where incorporation of H results in complete neutral-
ization of the acceptors. A post-growth anneal is required
to remove H from the vicinity of the acceptors, yielding
the desired p-type conductivity. A thorough understand-
ing of complex formation and dissociation is deemed es-
sential for optimizing the activation process and enhancing
the conductivity. Experimentally, vibrational spectroscopy
has proven an excellent tool for monitoring the presence
of acceptor-hydrogen complexes [2]. Identification of the
complex responsible for a particular line, however, is pos-
sible only in conjunction with first-principles theory. For
instance, the local vibrational mode (LVM) at 3125 cm
21
observed in Mg-doped GaN [3,4] occurs at a much higher
frequency than expected for Mg-H bonds. Computations
have shown, however, that the hydrogen atom in the Mg-H
complex is strongly bonded to a nitrogen neighbor of the
Mg atom [see Fig. 1(a)], explaining the high frequency of
the observed vibrational mode [5].
Recently, infrared spectroscopy using polarized light
produced additional information about the Mg-H complex:
Clerjaud et al. [4] found that the electric dipole induced by
the vibration (which should roughly correspond to the ori-
entation of the N-H bond) formed an angle of 130
±
with
the c axis of the GaN wurtzite crystal. This large deviation
from the expected angle of 109
±
in the AB
N,
(antibond-
ing) configuration [see Fig. 1(a)] is very puzzling. Our
calculations show that a distorted AB
N,
configuration in
which the N-H bond forms an angle of 130
±
with the c
axis (as shown in Ref. [4]) is unstable and immediately
relaxes back to the regular configuration with u 109
±
.
The first goal of this Letter is to propose a new model
for the configuration of the Mg-H complex, illustrated in
Fig. 1(b): in this structure (which we label OA
k
), the N-H
bond is not aligned in the same direction as the Mg-N
bond [as in Fig. 1(a)]; rather, the Mg-N bond is oriented
(roughly) along [0001], and the interaction between H and
the Mg atom changes the angle u to approximately 130
±
.
Both this angle and the calculated vibrational frequency for
this structure (reported below) are in very good agreement
with experiment [4]. However, one mystery remains: the
calculated total energy of this configuration is higher (by
0.19 eV) than the energy of the AB
N,
configuration. The
magnitude of this energy difference would render experi-
mental observation of OA
k
very unlikely.
The second goal of this Letter is to provide an expla-
nation for the stabilization of the 130
±
configuration. The
relative occupation of the two configurations is determined
at high temperatures, where the H atom is sufficiently mo-
bile to explore various local minima. The stability of the
candidate configurations is thus determined by their free
energy. It turns out the 130
±
configuration gives rise to
a set of low-energy excitations, which contribute signifi-
cantly to the entropy of the complex. At sufficiently high
temperatures the entropy term lowers the free energy of the
FIG. 1. Schematic representation of atomic positions in the
(11-20) plane for a Mg-H complex in wurtzite GaN, with H
at the (a) AB
N,
site and (b) OA
k
site. Large circles represent
Ga atoms, medium circles N atoms, shaded circle the Mg atom,
and the small circle the H atom. Dashed circles indicate ideal
atomic positions, dashed lines bonds in the ideal lattice. Changes
in Mg-N bond lengths are given as a percentage of change from
the bulk Ga-N bond lengths.
205505-1 0031-9007 01 87(20) 205505(4)$15.00 © 2001 The American Physical Society 205505-1