International Symposium of Research Students on Material Science and Engineering December 20-22, 2004, Chennai, India Department of Metallurgical and Materials Engineering, Indian Institute of Technology Madras SYNTHESIS AND DIELECTRIC BEHAVIOR OF SOME Ti DOPED STRONTIUM STANNATE Sindhu Singh , P. Singh, C. R. Gautam, O. Parkash and D. Kumar Department of Ceramic Engineering, Institute of Technology Banaras Hindu University Varanasi-221005 India ABSTRACT In the present investigation samples of SrSn 1-x Ti x O 3 were prepared by solid-state ceramic route. X- ray diffraction studies confirm the formation of single phase cubic perovskite (0< x< 0.4). Unit cell parameters have also been calculated for the samples. Dielectric constant and dielectric loss was measured as a function of temperature at a few selected frequencies in the temperature range 300 to 500K. It is observed that the dielectric constant varies slightly with doping of Ti. Keywords: Strontium stannate; Dielectric behavior, Perovskite oxide 1. INTRODUCTION Electronic materials with high dielectric constant, high Q- values and good stability of temperature coefficient of resonant frequency have been extensively studied because of their applications in discrete and multilayer capacitors (MLC), microwave telecommunication applications and low loss substrates for microwave integrated circuits 1 . Complex perovskite-related oxides have been of great importance since a number of materials exhibiting a wide range of unusual properties can be synthesized based on them. These include magnetic materials, superconductors, laser host materials and dielectric materials. The ability of simple perovskite structures ABO 3 to give rise to the intergrowth structures, oxygen deficient structures and ordered perovskite structures is well known. Dielectric oxides constitute a large proportion of materials, which have wide range of technological applications. There is an increasing demand on dielectric materials to surpass their present abilities to be of use in the fast changing world of electronics. At the root of all devices lie the bulk dielectric materials, on whose basic properties further progress may be made. In memory devices based on capacitive components, such as static and dynamic random access memories, the static dielectric constant of materials will ultimately decide the degree of miniaturization 2 . Barium stannate in doped and undoped form has been studied extensively e.g. Ba 1-x La x Sn 1-x Co x O 3 exhibit interesting and useful characteristics 3 . On the other hand CaSnO 3 and SrSnO 3 in doped form have not been studied much. In this paper synthesis and dielectric behavior of the system SrSn 1- x Ti x O 3 (x< 0.40) is being reported. 2. EXPERIMENTAL PROCEDURE Compositions with x< 0.40 in the system SrSn 1-x Ti x O 3 were prepared by the conventional solid-state ceramic route. Stoichiometric amount of SrCO 3 , TiO 2 and SnO 2 all are of A.R. grade and purity > 99% were used as starting materials. These were weighed accurately and mixed in an agate ball mill