Rok / Year: Svazek / Volume: Číslo / Number: Jazyk / Language 2018 20 1 EN High Efficiency Classes of RF Amplifiers - Erik Herceg, Tomáš Urbanec urbanec@feec.vutbr.cz, herceg@feec.vutbr.cz Faculty of Electrical Engineering and Communication Brno University of Technology DOI: - Abstract: This article is dealing with high efciency RF ampliĄers in modern classes F, E and J. The Ąrst part is focused on basic function, main parameters and the output matching topologies of the mentioned classes. Output voltage and current waveforms were simulated for each class of high efciency ampliĄers. The primary focus of this work is the practical design of class F ampliĄer for 435 MHz band with E-pHEMT transistor. Power added efciency (PAE) of ampliĄer achieved 58% and output power was 27 dBm with 14 dBm of input power. AmpliĄer was realized exclusively with lumped components in order to adhere to the given dimensions. Class F ampliĄers designed at megahertz frequencies and with E-pHEMT transistor are quite rare and this article could help designers with understanding narrowband F-class ampliĄers with higher efciency. This ampliĄer can be used in long range IoT application, because of its low consumption of energy which is necessary in this modern technology. All results were simulated within ADS Keysight environment. Every simulation was realized with nonlinear models from Modelithics.