1
Substrate -Nozzle Distance (SND) influence on the Properties of Fluorine-Doped
Tin Oxide Thin Films
Ayodeji Oladiran Awodugba
Department of Pure and Applied Physics, Ladoke Akintola University of Technology, Ogbomoso
aoawodugba@lautech.edu.ng
Corresponding author
Gbadebo Taofeek Yusuf
Department of Science Laboratory Technology, Physics Unit, Osun State Polytechnic, Iree
taofeeky001@gmail.com
Abstract
This work examines the impact of the nozzle-substrate distance (NSD) on the structural, optical and
electrical properties of fluorine-doped tin oxide (FTO) thin films. The films were grown by spray
pyrolysis with the chemical formulation of “Streaming Process for Electroless and Electrochemical
Deposition technology” (SPEED) technique. The characterization technique such as XRD, SEM,
UV-spectrophotometry and Hall Effect measurement were employed for studying the structural,
optical and electrical properties of the FTO films at various NSD. The NSD was varied from 25-
32cm amid the experiment. All FTO films are polycrystalline, tetragonal crystal structure with strong
orientation along the (211) reflection. SEM properties study demonstrated slight reliance on NSD
and have uniform films which are a disciple to substrate at NSD of 27 and 30 cm, however, crumbled
at 25cm and 32cm NSD. They likewise displayed a mud-look like morphology and smooth white
appearance. The average optical transmittance of all films is over 80% in the noticeable at UV range.
The band gap investigation demonstrates the average value of 3.5eV and the resistivity was found to
diminish with increasing NSD at 30 cm. Both mobility and carrier concentration of the FTO films
follow a similar trend. The average figure of merit of 4.98 × 10
was obtained which is an
improvement based on our previous results. The FTO samples grown at 27 and 30 cm NSD in this
work are best FTO samples and hence could serve as a promising candidate in dye sensitized solar
cells. Therfore, graphene has been employed in different concentrations in our ongoing FTO
optimization research so as to further improve on the FTO’s figure of merit.
Keywords: NSD, Fluorine, morphology, SPEED
1. Introduction
Among the transparent conducting oxides, fluorine-doped tin oxide (FTO) is the best material that
could replace indium tin oxide (ITO) which is expensive due to the scarcity of element “indium”
present in the compound [1]. It is an n-type, wide band gap semiconductor, with an average band gap
of 3.5 eV and with special properties such as high transmittance in the visible range and high
reflectance in the infrared, high carrier mobility, excellent electrical conductivity, and good stability
at higher temperature [2]. FTO has a lot of applications which include: solar cells, protective
electrodes, flat panel collectors, sensors, sodium lamps, and varistors. The microstructural, electrical
and optical properties of FTO are sensitive to deposition techniques and conditions [3]. Extensive
research has been focused so far on finding a way to overcome problems associated with FTO thin
films through methods of fabrication and growth control [4-7]. The effect of several technological
parameters such as doping concentration, solvent, substrate temperature, etc. on the properties of
sprayed FTO films has been studied to determine the optimal deposition conditions to obtain as high
electrical conductivity and optical transparency as possible [4-7].Numerous methods have been used
for deposition of fluorine-doped thin films such as Thermal Evaporation [4, 9], Spray Pyrolysis [4,
Preprints (www.preprints.org) | NOT PEER-REVIEWED | Posted: 7 December 2017 doi:10.20944/preprints201712.0043.v1
© 2017 by the author(s). Distributed under a Creative Commons CC BY license.