Multiple Independent Gate Field Effect Transistors – Device, Process, Applications. Leo Mathew, Michael Sadd, Aaron Thean, Tab Stephens, Rode Mora, Melissa Zavala, BichYen Nguyen, Raghaw Rai, Susan Backer, Rob Shimer,W. Zang*, Murshed.M.Chowdhry*, Jerry G. Fossum* *University Of Florida APRDL, Freescale Semiconductors Inc. 3501 Ed Bluestein Blvd., MD: K10 Austin, TX 78721, USA. ABSTRACT Double gate SOI devices have been widely researched to replace the current planar SOI devices. These double gate device structures have multiple gate surfaces but a single gate electrode. Recently double gate structures with independent gate structures have been studied. Independent gate devices offer additional advantages and challenges. This paper will review some of the challenges and advantages of such structures covering process integration, device architecture, compact models and circuit design. Experimental results of device, circuit and performance will be presented. INTRODUCTION The semiconductor industry has scaled the MOSFET over the last decade using electrostatic scaling rules[1]. Manufacturing capabilities have made it feasible to scale the device structures to be shorter by advancing lithography, thinner dielectrics using more precise process controls of diffusion and shallower junctions by better Ion Implant and diffusion technologies[1]. The move to SOI has been a significant change in the structure such as reducing junction capacitances. Copper interconnects and Low-K dielectrics are significant changes in materials to reduce interconnect delay. This path to scaling is becoming more difficult and new device structures and materials are proposed to replace the planar CMOS structures[1]. Thinning down the channel (FDSOI) and using an additional gate to control the channel (Double Gate) are the most promising novel structures proposed to continue scaling these device structures. The improvements due to Double gate devices do not have to be limited to better short channel control and better performance of existing circuits. If the gates that control the thin channel region can be split and independently controlled a slew of new applications is feasible. It is challenging to make such devices but new process techniques have made such devices feasible and new applications are being explored.