International Journal of Electronics Engineering Research. ISSN 0975-6450 Volume 9, Number 2 (2017) pp. 255-266 © Research India Publications http://www.ripublication.com Modeling and Simulation Studies of 22nm Multigate bulk FinFET Structures with Different Dielectric Materials Nelsa Abraham Government Engineering College, Barton hill, Thiruvananthapuram, Kerala-695035, India. Ankit Parakh Government Engineering College, Barton hill, Thiruvananthapuram, Kerala-695035, India. Dr. Unni C. T.K.M. Engineering College Kollam, Kerala-691005, India. Abstract FinFET is a promising substitute to conventional MOSFET which has reached its limits as it has higher leakage for too little performance enhancement. It is being recommended as the basis for future IC technologies because of its power/performance benefits, scalability, better control over short channel effects etc. But the complexity of structures affect the performance of the device. The reduction of thickness of gate dielectric below 2nm, which is close to physical limit has led to a huge increase in gate leakage current due to tunneling effect. On further scaling, the leakage current through SiO2 which is currently used as dielectric is intolerable due to high power consumption and low breakdown voltage. In this paper, the working of double gate bulk FinFET is simulated using HfO2 and ZnO as dielectric materials using TCAD tool. Besides this, capacitance extraction has also being done for the two different