Chapter 39 An Analytical Model for AlGaN/GaN MOS-HEMT for High Power Applications Nguyen-Trung Do, Nguyen-Hoang Thoan, Tran Minh Quang, Dao Anh Tuan, and Nguyen-Ngoc Trung Abstract We develop a physics based analytical model for AlGaN/GaN high elec- tron mobility transistors (HEMT and MOS-HEMT) to study the I-V characteristics, current transfer characteristics, transconductance and drain-conductance. The model is modified from a model first presented by Chang and Fetterman for AlGaAs/GaAs HEMT (Chang and Fetterman in Solid-State Electron 30(5), 1987 [1], IEEE Trans Electron Dev Ed-34(I), 1987 [2]) The linear and non-linear drain currents have been separately calculated and merged them in order to evaluate the I-V characteristics. The threshold voltage has been evaluated from current transfer characteristics plot and verified from the transconductance parameter. We also consider the effect of polarization on threshold voltage of the devices. Moreover, to prove the exactness of our model, we compare our data with our experiment data for common HEMT, Hasan’s MOS-HEMT and Yoon’s HEMT with short channel. 39.1 Introduction Nowadays, the development of power devices and modern applications such as smart phone, electric converter is helping our life became more convenience. The classic Si-based devices has reached limitation so it’s difficult to create new one with better performances. GaN-based high electron mobility Transistors (HEMTs) are emerging as great candidates for high-temperature, high-power and radio-frequency (RF) elec- tronics due to their unique capabilities of achieving higher current density, higher breakdown voltage, higher operating temperatures and higher cut-off frequencies compared to silicon (Si) [3]. Due to higher breakdown voltage, up to 2 × 10 6 V/cm, GaN MOSFET and GaN/AlGaN HEMT can operate at higher temperature and power than that of Si MOSFET and GaAs HEMT [3, 4]. Moreover, GaN is more chemical stable and environmentally friendly than GaAs. GaN-based HEMT has a current flow which is controlled by a metal Schottky-gate leads to a MOS structure on the top of HEMT, which decreases gate leakage current in Schottky-gate devices and the N.-T. Do · N.-H. Thoan · T. M. Quang · D. A. Tuan · N.-N. Trung (B ) School of Engineering Physics, Hanoi University of Scienceand Technology, Hanoi, Vietnam e-mail: trung.nguyenngoc@hust.edu.vn © Springer Nature Switzerland AG 2020 I. A. Parinov et al. (eds.), Advanced Materials, Springer Proceedings in Materials 6, https://doi.org/10.1007/978-3-030-45120-2_39 477